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  • 1
    Electronic Resource
    Electronic Resource
    Correlated roughness effects on electrical conductivity of quantum wires (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 8002-8005 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The influence of electron scattering by rough boundaries on electrical conductivity of quantum wires is studied in the diffuse transport limit within the kinetic Boltzmann equation approach. The considerations are restricted to the wires obtained by lateral confinement of a two-dimensional electron gas. Both intra- and interboundary roughness correlations are taken into account. It is shown that the cross correlations usually increase the conductivity, leaving the shape and phase of the quantum size oscillations almost unaffected. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1372656
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  • 2
    Electronic Resource
    Electronic Resource
    Self-affine roughness effects on electron transmission and electric current in tunnel junctions (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 88 (2000), S. 927-931 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Interface roughness effects on electron transmission in tunnel junctions are investigated theoretically in the limit of thick barriers. The barrier roughness is described in terms of self-affine fractal scaling by the roughness exponent H, rms roughness amplitude w, and correlation length ξ. For realistic parameters diffuse transmission usually exceeds specular transmission. It is shown that for small roughness exponents (H〈0.5) the transmission coefficient increases with decreasing ratio w/ξ. For large roughness exponents (or smoother interfaces at short wavelengths) the transmission coefficient has a maximum at a certain value of the ratio w/ξ. With increasing w/ξ the tunneling current behaves similarly as the transmission coefficient. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.373757
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  • 3
    Electronic Resource
    Electronic Resource
    Roughness effect on heterojunction photovoltaics (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 8531-8536 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In this work, we present an investigation of the junction interface roughness effect on the open circuit voltage, Voc for thin film heterojunction photovoltaics. The roughness effect is studied for self-affine rough interfaces, which are described in Fourier space by the correlation model ∼σ2ξ2(1+aq2ξ2)−1−H. σ, ξ, and H denote, respectively, the rms roughness, the in-plane roughness correlation length, and the interface irregularity exponent (0〈H〈1). The roughness effect becomes significant for small H (〈0.5), and for large long-wavelength roughness of typical values σ/ξ∼0.1. The junction interface roughness may yield a contribution to Voc even up to 10%. Comparison of the results is performed with predictions in real heterojunctions, e.g., CuxS/(Zn)CdS. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.362532
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  • 4
    Electronic Resource
    Electronic Resource
    Mound surface roughness effects on the thermal capacitance of thin films (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 6130-6134 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We investigate the influence of roughness at a nanometer scale on the thermal properties of thin films. It is shown that the roughness causes an increase of the thermal capacitance. For mound rough surfaces the increase of the thermal capacitance depends strongly on the relative magnitude of the average mound separation λ and the system correlation length ζ. Indeed, a rather complex behavior develops for ζ〉λ, while for ζ〈λ a smooth decrease of the capacitance as a function of the average mound separation λ takes place. Finally, the roughness strongly affects the thermal capacitance as a function of the film thickness as long as ζ〈λ, while a precise determination of the actual effect requires a more-detailed knowledge of the thickness dependence of the involved roughness parameters during film growth. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1368390
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  • 5
    Electronic Resource
    Electronic Resource
    Growth front roughening of room-temperature deposited copper nanocluster films (2002)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 81 (2002), S. 1089-1091 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Growth front aspects of copper nanocluster films deposited with low energy onto silicon substrates at room temperature are investigated by atomic force microscopy. Analyses of the height-difference correlation function yield a roughness exponent H of 0.45±0.05. The root-mean-sqaure roughness amplitude w evolves with deposition time as a power law, w∝tβ (β=0.62±0.07), leading also to a power-law increase of the local surface slope ρ, ρ∝tc (c=0.73±0.09). These scaling exponents, in combination with an asymmetrical height distribution, point at a complex nonlinear roughening mechanism dominated by the formation of voids resulting in a highly porous film. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1497200
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  • 6
    Electronic Resource
    Electronic Resource
    Linear growth of thin films under the influence of stress (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 78 (2001), S. 3044-3046 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have studied the growth of thin films in the presence of stress instability that enhances the roughness and roughening induced by conservative as well as nonconservative noise. It is clearly illustrated that nonconservative noise effects may enhance stress induced roughness. Nevertheless, the incorporation of conservative noise appears to also be substantial in growth processes driven by diffusion. For growth on a rough substrate the dependence of the amplitude of the surface roughness on the film thickness differs from that of a film growing on a flat substrate. The amplitude shows a minimum at a particular substrate thickness, which indicates that the growth up to this thickness is enforced by undulations of the substrate. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1372209
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  • 7
    Electronic Resource
    Electronic Resource
    Surface sensitivity effects with local probe scanning Auger–scanning electron microscopy (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 75 (1999), S. 1080-1082 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: This letter concentrates on a quantitative description of surface roughness effects on Auger peak-line profiles for pure and alloyed specimens. The nanometer lateral electron probe size of the order of 10 nm yielded peak-line profiles that capture surface topology variations down to nanometer-length scales. Surface roughness leads to peak-intensity fluctuations, which are described within the weak roughness limit by a simple form, I(r)(approximate)Iav[1+βh(r)]. Iav is the average peak intensity, h(r) represents the roughness fluctuation along a lateral in-planar distance r, and β is a constant (〈1). In addition, analyses of the peak-difference correlation function Iz(r)=〈|I(r)−I(0)|2〉1/2 showed a power-law behavior Iz(r)∝rα with α ranging between 0.7 and 1 at small-length scales, i.e., for r(very-much-less-than)ξ, with ξ a peak correlation length that was comparable to average specimen cluster sizes. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.124603
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  • 8
    Electronic Resource
    Electronic Resource
    Fabrication of Co/Si nanowires by ultrahigh-vacuum scanning tunneling microscopy on hydrogen-passivated Si(100) surfaces (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 85 (1999), S. 1907-1910 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have fabricated nanometer width Co/Si metal lines on Si(100) surfaces by ultrahigh-vacuum scanning tunneling microscopy (UHVSTM) based nanolithography on the hydrogen-passivated surface, combined with vapor deposition of Co at room temperature and subsequent annealing. The STM tip was used to define depassivated lines (〈10 nm in width) by electron stimulated hydrogen desorption, and subsequently Co was deposited at a submonolayer coverage. Annealing of the substrate at 410 °C (just below hydrogen desorption) improves the structure of the wire due to silicidation, whereas the as-deposited wire is very granular (comparable to other materials in previous studies). © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.369171
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  • 9
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    Triple-point wetting of van der Waals films on self-affine and mound rough surfaces (2002)
    American Physical Society
    Details
    Publication Date: 2002-08-26
    Print ISSN: 1063-651X
    Electronic ISSN: 1095-3787
    Topics: Physics
    Published by American Physical Society
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  • 10
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    Graphene-on-Silicon Near-Field Thermophotovoltaic Cell (2014)
    American Physical Society
    Details
    Publication Date: 2014-09-11
    Electronic ISSN: 2331-7019
    Topics: Physics
    Published by American Physical Society
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