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  • 1
    Electronic Resource
    Electronic Resource
    A study of Franz–Keldysh oscillations of GaAs/Si/GaAs and AlAs/Si/AlAs heterostructures (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 3616-3619 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have carried out a detailed study of Franz–Keldysh oscillations observed in the photoreflectance spectra of molecular beam epitaxy grown GaAs/Si/GaAs and AlAs/Si/AlAs heterostructures with a Si nominal thickness of two monolayers. The oscillations in the photoreflectance spectra were due to internal electric fields generated by graded p-n junctions created by Si diffusion. The data were analyzed employing the asymptotic Franz–Keldysh theory. It is concluded that different contributions from degenerate heavy and light hole bands, to transitions around the Γ point of the Brillouin zone, must be expected for different heterostructures depending upon the particular characteristics of the internal electric fields present in the sample.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.357422
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  • 2
    Electronic Resource
    Electronic Resource
    Segregation and interdiffusion of In atoms in GaAs/InAs/GaAs heterostructures (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 1770-1775 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The segregation and interdiffusion of In atoms in the GaAs/InAs/GaAs heterostructures were investigated by secondary-ion mass spectroscopy. When the 1-ML-thick InAs layer was grown in a layer-by-layer growth mode with no dislocations, the segregation of In atoms became marked with the increase of the growth temperature. However, the segregation was observed even at a relatively low growth temperature of 400 °C in molecular beam epitaxy. It was found that the segregation was markedly enhanced by dislocations near the heterointerface when thick InAs layers were grown in a three-dimensional island growth mode. The interdiffusion of In atoms toward the growth direction occurred after thermal annealing, which could be assisted by vacancies propagating from the film surface into the epilayer. It became apparent that the interdiffusion was effectively suppressed by a thin AlAs layer inserted in the GaAs cap layer.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.354806
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  • 3
    Electronic Resource
    Electronic Resource
    Growth mechanism of (InAs)m(GaAs)n strained short-period superlattices grown by molecular beam epitaxy (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 7257-7263 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The growth mechanism of (InAs)m(GaAs)n strained short-period superlattices grown on GaAs(001) and InAs(001) substrates was investigated by reflection high-energy electron diffraction and transmission electron microscopy. In the growth on a GaAs substrate, the two-dimensional layer-by-layer growth mode (Frank–Van der Merwe mode) was successfully realized even over the critical thickness when the lattice mismatch is less than ∼2.4%. In this case, the critical thickness of the grown layer on GaAs was remarkably increased by applying the superlattice structures. However, the strained short-period superlattices on InAs substrate were grown in the Stranski–Krastanov mode. The growth mode of strained short-period superlattices can be explained by the balance of surface and interface free energies, which could relate to the difference of the bonding energy between In-As and Ga-As. The growth mode of strained short-period superlattices depended strongly on the growth temperature. In the relatively high temperature growth, the growth mode of strained short-period superlattice grown on a GaAs substrate was changed from the Frank–Van der Merwe mode to the Stranski–Krastanov mode. It could be attributed to intermixing of superlattice structure due to the surface segregation of In atoms assisted by thermal energy.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.355016
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  • 4
    Electronic Resource
    Electronic Resource
    Realization of low facet density and the growth mechanism of GaAs on GaAs(110) by migration-enhanced epitaxy (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 58 (1991), S. 580-582 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Smooth GaAs layers were successfully grown by migration-enhanced epitaxy on exactly (110) oriented substrates. The surface of layers grown by conventional molecular beam epitaxy was completely covered with facets, whose density was higher than 106 cm−2. The facet density was reduced remarkably by three orders of magnitude using the migration-enhanced epitaxy method. Observing the intensity oscillations of the specular spot of reflection high-energy electron diffraction patterns, the growth mode and the migration characteristics of surface adatoms have been investigated.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.104593
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  • 5
    Electronic Resource
    Electronic Resource
    Solid phase epitaxial growth of GaAs on Si (111) (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 56 (1990), S. 1664-1666 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A continuous GaAs film was successfully grown on Si(111) at the initial stage (20 A(ring) growth thickness) by solid phase epitaxial growth. This growth suppressed the island formation observed with direct growth of GaAs on Si. The GaAs(111)A was obtained for the first time on Si(111) with an As prelayer deposited at 20 °C and 350 °C. The GaAs(111)B was also grown on Si(111) with an As prelayer deposited at 580 °C and 700 °C. The polarity of the (111) GaAs epitaxial film depends on the substrate temperature at which the As prelayer is deposited on Si.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.103110
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  • 6
    Electronic Resource
    Electronic Resource
    Laser vaporization of alloys: fluorescence and electronic structure of aluminum-copper (AlCu) (1990)
    s.l. : American Chemical Society
    The @journal of physical chemistry 〈Washington, DC〉 94 (1990), S. 1313-1316 
    Details
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology , Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/j100367a022
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  • 7
    Electronic Resource
    Electronic Resource
    Reduction of threading dislocation density in InP-on-Si heteroepitaxy with strained short-period superlattices (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 100-102 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We applied multistrained short-period superlattices (SSPSs) and GaP buffer layers to the InP-on-Si heteroepitaxy, in order to suppress the generation of threading dislocations. As a result, it was found that the density of threading dislocations in an InP/SSPSs/GaAs/SSPSs/GaP/Si structure including (InAs)m(GaAs)n SSPSs and (GaAs)i(GaP)j SSPSs was remarkably reduced, compared with that in the InP/GaP/Si structure. Misfit dislocations lying along the 〈011〉 directions were observed at heterointerfaces in the InP/SSPSs/GaAs/SSPSs/GaP/Si structure. Therefore, the lattice mismatch strain was stepwise accommodated by the generation of misfit dislocations at the heterointerfaces. From these results, it was clarified that multi-SSPSs are effective for reducing the density of threading dislocations in heteroepitaxy with a large lattice mismatch. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.118087
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  • 8
    Electronic Resource
    Electronic Resource
    Initial growth mechanism of AlAs on Si(111) by molecular beam epitaxy (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 59 (1991), S. 2983-2985 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The initial growth mechanism of AlAs-on-Si(111) substrate was investigated. The suppression of three-dimensional growth was successfully realized at the initial growth stage, which is difficult in the growth of GaAs on Si. The initial growth process was clarified, in which the lattice relaxation proceeded gradually. It took about 30 ML to relax the lattice completely at the growth temperature of 400 °C. GaAs was grown in the two-dimensional mode on the completely relaxed AlAs on the Si(111) substrate.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.105819
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  • 9
    Electronic Resource
    Electronic Resource
    Ge segregation and its suppression in GaAs epilayers grown on Ge(111) substrate (1992)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 61 (1992), S. 1216-1218 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The interdiffusion of the compositional atoms was investigated at heterointerface between a GaAs epilayer and a Ge(111) substrate by secondary ion mass spectroscopy. When a thin AlAs layer is applied initially, diffusion of Ge into the GaAs epilayer was suppressed effectively. An abrupt heterointerface was successfully realized in relatively high temperature growth. The interdiffusion process at the AlAs-Ge heterointerface was clarified in high temperature growth, which was dominated by the temperature-assisted segregation of Ge atoms during the AlAs growth rather than thermal diffusion. The compositional diffusion of Al atoms into the GaAs epilayer was also observed, which was enhanced by the Ge segregation in the structure of GaAs/AlAs/Ge substrate grown at higher temperature.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.107599
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  • 10
    Electronic Resource
    Electronic Resource
    Suppression of threading dislocation generation in highly lattice mismatched heteroepitaxies by strained short-period superlattices (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 63 (1993), S. 2067-2069 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The threading dislocation density was remarkably reduced in highly lattice mismatched heteroepitaxies of the In0.5Ga0.5As/GaAs(001) and GaAs/GaP(001) systems. The two-dimensional growth mode was obtained even after the lattice relaxation by applying the strained short-period superlattices. The misfit dislocations aligned along the 〈110〉 direction were mainly generated at heterointerfaces. The misfit strain was relieved by the generation of the misfit dislocations in the absence of three-dimensional island growth. It was found that the generation of threading dislocations is effectively suppressed by introducing strained short-period superlattices at the initial growth stage of highly lattice mismatched heteroepitaxies.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.110594
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