Publication Date:
2019-07-13
Description:
Time-resolved ion beam induced charge reveals heavy ion response of IBM 5AM SiGe HBT: a) Position correlation[ b) Unique response for different bias schemes; c) Similarities to TPA pulsed-laser data. Heavy ion broad-beam transients provide more realistic device response: a) Feedback using microbeam data; b) Overcome issues of LET and ion range with microbeam. Both micro- and broad-beam data sets yield valuable input for TCAD simulations. Uncover detailed mechanisms for SiGe HBTs and other devices fabricated on lightly-doped substrates.
Keywords:
Electronics and Electrical Engineering
Type:
The 18th Annual Single Event Effects (SEE) Symposium; Apr 20, 2009 - Apr 22, 2009; La Jolla, California; United States
Format:
application/pdf
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