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  • 1
    Electronic Resource
    Electronic Resource
    Accurate determination of majority thermal-capture cross sections of deep impurities in p-n junctions (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 2605-2612 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A new method for the direct determination of majority thermal-capture cross sections and concentration of deep levels in p-n junctions is proposed. The combined use of a capacitance technique and a numerical simulation (which reproduces the experimental details) provides accurate results through the fitting of experimental and numerical capture transients. The sensitivity of the method to these electrical magnitudes is also shown. This procedure is applicable not only to abrupt p+-n junctions, which have been quite thoroughly analyzed, but also to samples where a nonabrupt shallow-dopant profile together with a high concentration of deep levels makes them respond to a capture pulse in ways not reported until now. This method was used to analyze the two levels of platinum in silicon in nonabrupt p+-n junctions with a platinum concentration comparable to that of the shallow dopant.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.354673
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  • 2
    Electronic Resource
    Electronic Resource
    Direct and trap-assisted elastic tunneling through ultrathin gate oxides (2002)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 91 (2002), S. 5116-5124 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The direct and assisted-by-trap elastic tunnel current in metal–oxide–semiconductor capacitors with ultrathin gate oxide (1.5–3.6 nm) has been studied. Bardeen's method has been adapted to obtain the assisted tunnel current, in addition to the direct tunnel current. The dependence of the assisted current on the trap distribution in energy has also been analyzed. This allows us to obtain the trap distribution in energy from experimental current curves. Finally, we have analyzed the role of the image force, the inclusion of which can avoid a barrier height dependence on the oxide thickness. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1461062
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  • 3
    Electronic Resource
    Electronic Resource
    Contribution of injection in current noise due to generation and recombination of carriers in p–n junctions (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 3998-4006 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A theory for the current noise associated with carrier generation and recombination in the space-charge region of p–n junctions is presented. We propose a noise model based on the response of the electric field to fluctuations of the trapped charge in this region, and make use of a collective transport-noise theory. The effects of the fluctuations of the space-charge region borders due to the fluctuations of the trapped charge are now taken into account. This new contribution is negligible when generation–recombination current governs the diode current. However, it is significant when diffusion current dominates, allowing the analytical study of generation–recombination noise to be extended to wider ranges of bias and temperature. Experimental results at low and high temperatures are explained with our theory. Empirical formulas of current noise density are also explained according to this complete theory of current noise calculation. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1403676
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  • 4
    Electronic Resource
    Electronic Resource
    Influence of technological parameters on the behavior of the hole effective mass in SiGe structures (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 88 (2000), S. 1978-1982 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We present a study of some features of a two-dimensional hole gas confined in a Si/Si1−xGex/Si/SiO2 structure when the external applied gate bias is varied. From the framework of the effective-mass theory, and applying the semiaxial approximation to separate the 6×6 Luttinger Hamiltonian into two 3×3 matrices, we calculated the hole density profile and the band structure. This enabled us to evaluate, in an iterative process, the Poisson and Schrödinger equations until convergence was achieved, obtaining the above-mentioned results for a discretional angle in the kx–ky plane, and thus including the warping. We identified in this way the influence of the different technological parameters which determine the behavior of the device, in particular, through the determination of a unique effective mass. We conclude that the utility of this kind of device lies more in the possibility of modifying the band structure due to the strain introduced than in the fact of being able to confine carriers in the Si1−xGex channel. Accurate calculation of the band structure is, therefore, needed and although simpler simulations can qualitatively model some features of the device, a complete study as described in this article must be carried out in order to obtain better insight into the physics of the system. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1304839
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  • 5
    Electronic Resource
    Electronic Resource
    Hypervirial theorem and parameter differentiation: Closed formulation for harmonic oscillator integrals (1987)
    College Park, Md. : American Institute of Physics (AIP)
    Journal of Mathematical Physics 28 (1987), S. 1032-1035 
    Details
    ISSN: 1089-7658
    Source: AIP Digital Archive
    Topics: Mathematics , Physics
    Notes: A simple method has been developed to generate a closed formula for the calculation of matrix elements of arbitrary functions f(x) in the representation of the harmonic oscillator. The proposed algebraic procedure is based on the combined use of the hypervirial theorem with and without the second quantization formalism along with the parameter differentiation technique. The closed formula thus obtained is given in terms of a sum involving the jth derivative of f(x) evaluated at zero.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.527543
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  • 6
    Electronic Resource
    Electronic Resource
    Excited electronic states of protonated acetylene. II. Anisotropy of the potential energy surface (1993)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 99 (1993), S. 1985-1989 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: Extensive ab initio configuration interaction calculations have been carried out for different directions of approach of a proton to a rigid acetylene molecule. The calculated potential energy curves of several singlet states are presented. The anisotropy we found allows us to explain features of the charge transfer mechanism during proton–acetylene collisions as observed in recent molecular beam experiments. An important theoretical conclusion is the preference of the linear approach of protons in collisions with acetylene for the formation of acetylene ions.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.465259
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  • 7
    Electronic Resource
    Electronic Resource
    Physical model for trap-assisted inelastic tunneling in metal-oxide-semiconductor structures (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 3396-3404 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A physical model for trap-assisted inelastic tunnel current through potential barriers in semiconductor structures has been developed. The model is based on the theory of multiphonon transitions between detrapped and trapped states and the only fitting parameters are those of the traps (energy level and concentration) and the Huang–Rhys factor. Therefore, dependences of the trapping and detrapping processes on the bias, position, and temperature can be obtained with this model. The results of the model are compared with experimental data of stress induced leakage current in metal-oxide-semiconductor devices. The average energy loss has been obtained and an interpretation is given of the curves of average energy loss versus oxide voltage. This allows us to identify the entrance of the assisted tunnel current in the Fowler–Nordheim regime. In addition, the dependence of the tunnel current and average energy loss on the model parameters has been studied. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1398603
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  • 8
    Electronic Resource
    Electronic Resource
    A comprehensive model for Coulomb scattering in inversion layers (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 924-934 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A comprehensive model for Coulomb scattering in inversion layers is presented. This model simultaneously takes into account the effects of: (i) the screening of charged centers by mobile carriers, (ii) the distribution of charged centers inside the structure, (iii) the actual electron distribution in the inversion layer, (iv) the charged-center correlation, and (v) the effect of image charges. A Monte Carlo calculation to obtain the effective mobility of electrons in an n-Si(100) inversion layer by using the model proposed for Coulomb scattering has been developed. The importance of correctly taking into account the effects above to study Coulomb scattering in inversion layers is pointed out.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.356448
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  • 9
    Electronic Resource
    Electronic Resource
    Monte Carlo simulation of multiphonon capture mechanism by deep neutral impurities in Si in the presence of an electric field (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 5448-5453 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The multiphonon emission capture mechanism by neutral centers, in the presence of an electric field below 1 MV/cm, has been numerically simulated by the Monte Carlo method. Based on common models for the initial and final states, a simple expression of the process probability has been calculated considering both nonpolar and polar electron–phonon coupling. The validity range of this expression is assumed for a carrier energy Ek〈ET, where ET is the impurity level depth. In order to check the probability rate, this mechanism was included in the framework of a previous numerical procedure as one more mechanism for calculating the capture cross section as an electric-field function. This theoretical framework is given for both polar and nonpolar semiconductors. The Pt and Au acceptor levels in Si have been analyzed with the probability expression, particularized for the case of nonpolar coupling, by fitting the available experimental data of capture cross sections with the numerical results. In both cases, the values of the Huang–Rhys parameter have been confirmed with the experimental measurements and previous theoretical calculation without the applied field. According our calculations, the experimentally observed decrease of the cross sections at high fields is attributed to carrier heating. In the range of temperatures from 77 to 300 K, the dependence of the numerical capture cross sections appears as E−3/2 with a field between 5×104 V/cm and 1 MV/cm. The temperature dependence change of the numerical cross section at high electric field is also caused by electron heating. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.359659
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  • 10
    Electronic Resource
    Electronic Resource
    Comprehensive Monte Carlo simulation of the nonradiative carrier capture process by impurities in semiconductors (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 1998-2005 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The main nonradiative capture mechanisms, cascade and multiphonon emission, have been numerically simulated by the Monte Carlo method. To do so, both mechanisms were included in the frame of a previous numerical procedure to which the nonacoustic-phonon contribution was also added. Different centers were studied. Capture by shallow donors (P, As, and Sb) in n-type silicon were interpreted considering only the cascade process. Capture by acceptors levels of platinum, gold, and titanium in silicon, and one level of Cr, EL2, and EL3 in gallium arsenide, were analyzed considering only multiphonon emission, and calculating the values of Huang–Rhys factor when it is not available. In the study of capture by attractive deep centers, such as single ionized donor centers of sulfur and selenium in silicon, both cascade and multiphonon mechanisms must be combined. In this case the importance of the nonacoustic phonon has been shown in the cascade process. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.358835
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