Publication Date:
1991-05-31
Description:
An identified neuron of the leech, a Retzius cell, has been attached to the open gate of a p-channel field-effect transistor. Action potentials, spontaneous or stimulated, modulate directly the source-drain current in silicon. The electronic signals match the shape of the action potential. The average voltage on the gate was up to 25 percent of the intracellular voltage change. Occasionally weak signals that resemble the first derivative of the action potential were observed. The junctions can be described by a model that includes capacitive coupling of the plasma membrane and the gate oxide and that accounts for variable resistance of the seal.〈br /〉〈span class="detail_caption"〉Notes: 〈/span〉Fromherz, P -- Offenhausser, A -- Vetter, T -- Weis, J -- New York, N.Y. -- Science. 1991 May 31;252(5010):1290-3.〈br /〉〈span class="detail_caption"〉Author address: 〈/span〉Abteilung Biophysik der Universitat Ulm, Germany.〈br /〉〈span class="detail_caption"〉Record origin:〈/span〉 〈a href="http://www.ncbi.nlm.nih.gov/pubmed/1925540" target="_blank"〉PubMed〈/a〉
Keywords:
Action Potentials
;
Animals
;
Electric Conductivity
;
Electrophysiology
;
Kinetics
;
Leeches/*physiology
;
Microscopy, Electron, Scanning
;
Neurons/*physiology/ultrastructure
;
*Silicon
;
Transistors, Electronic
Print ISSN:
0036-8075
Electronic ISSN:
1095-9203
Topics:
Biology
,
Chemistry and Pharmacology
,
Computer Science
,
Medicine
,
Natural Sciences in General
,
Physics
Permalink