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  • 1
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    Terahertz electron cyclotron maser interactions with an axis-encircling electron beam (2015)
    American Institute of Physics (AIP)
    Details
    Publication Date: 2015-04-11
    Description: To generate terahertz radiation via the electron cyclotron maser instability, harmonic interactions are essential in order to reduce the required magnetic field to a practical value. Also, high-order mode operation is required to avoid excessive Ohmic losses. The weaker harmonic interaction and mode competition associated with an over-moded structure present challenging problems to overcome. The axis-encircling electron beam is a well-known recipe for both problems. It strengthens the harmonic interaction, as well as minimizing the competing modes. Here, we examine these advantages through a broad data base obtained for a low-power, step-tunable, gyrotron oscillator. Linear results indicate far more higher-harmonic modes can be excited with an axis-encircling electron beam than with an off-axis electron beam. However, multi-mode, time-dependent simulations reveal an intrinsic tendency for a higher-harmonic mode to switch over to a lower-harmonic mode at a high beam current or upon a rapid current rise. Methods are presented to identify the narrow windows in the parameter space for stable harmonic interactions.
    Print ISSN: 1070-664X
    Electronic ISSN: 1089-7674
    Topics: Physics
    Published by American Institute of Physics (AIP)
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  • 2
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    CORRIGENDUM: Resting-state functional reorganization of the rat limbic system following neuropathic injury (2015)
    Springer Nature
    Details
    Publication Date: 2015-01-24
    Description: Scientific Reports 5 doi: 10.1038/srep07603
    Electronic ISSN: 2045-2322
    Topics: Natural Sciences in General
    Published by Springer Nature
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  • 3
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    DNA breaks enrich near transcription start sites [Neuroscience] (2016)
    National Academy of Sciences
    Details
    Publication Date: 2016-02-24
    Description: High-throughput, genome-wide translocation sequencing (HTGTS) studies of activated B cells have revealed that DNA double-strand breaks (DSBs) capable of translocating to defined bait DSBs are enriched around the transcription start sites (TSSs) of active genes. We used the HTGTS approach to investigate whether a similar phenomenon occurs in primary neural...
    Print ISSN: 0027-8424
    Electronic ISSN: 1091-6490
    Topics: Biology , Medicine , Natural Sciences in General
    Published by National Academy of Sciences
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  • 4
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    Resting-sate functional reorganization of the rat limbic system following neuropathic injury (2014)
    Springer Nature
    Details
    Publication Date: 2014-09-03
    Description: Human brain imaging studies from various clinical cohorts show that chronic pain is associated with large-scale brain functional and morphological reorganization. However, how the rat whole-brain network is topologically reorganized to support persistent pain-like behavior following neuropathic injury remains unknown. Here we compare resting state fMRI functional connectivity-based whole-brain network properties between rats receiving spared nerve injury (SNI) vs. sham injury, at 5 days (n = 11 SNI; n = 12 sham) and 28 days (n = 11 SNI; n = 12 sham) post-injury. Similar to the human, the rat brain topological properties exhibited small world features and did not differ between SNI and sham. Local neural networks in SNI animals showed minimal disruption at day 5, and more extensive reorganization at day 28 post-injury. Twenty-eight days after SNI, functional connection changes were localized mainly to within the limbic system, as well as between the limbic and nociceptive systems. No connectivity changes were observed within the nociceptive network. Furthermore, these changes were lateralized and in proportion to the tactile allodynia exhibited by SNI animals. The findings establish that SNI is primarily associated with altered information transfer of limbic regions and provides a novel translational framework for understanding brain functional reorganization in response to a persistent neuropathic injury. Scientific Reports 4 doi: 10.1038/srep06186
    Electronic ISSN: 2045-2322
    Topics: Natural Sciences in General
    Published by Springer Nature
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  • 5
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    Bidirectional replication from an internal origin in a linear streptomyces plasmid (1994)
    American Association for the Advancement of Science (AAAS)
    Details
    Publication Date: 1994-08-12
    Description: Commonly, linear replicons that have protein covalently attached to 5' DNA termini replicate by protein-primed, strand-displacing, continuous synthesis of full-length strands. The synthesis of DNA in pSLA2, a 17-kilobase linear plasmid of Streptomyces rochei containing 5' terminal protein, occurs bidirectionally from an internally located replication origin. The replication intermediates are linear duplex molecules that have recessed (approximately 280 nucleotides) 5' ends rather than full-length single strands. The 3' over-hangs may serve as templates for the non-displacing synthesis of the lagging strand terminus primed by the covalently attached 5' DNA binding protein.〈br /〉〈span class="detail_caption"〉Notes: 〈/span〉Chang, P C -- Cohen, S N -- New York, N.Y. -- Science. 1994 Aug 12;265(5174):952-4.〈br /〉〈span class="detail_caption"〉Author address: 〈/span〉Department of Genetics, Stanford University School of Medicine, CA 94305.〈br /〉〈span class="detail_caption"〉Record origin:〈/span〉 〈a href="http://www.ncbi.nlm.nih.gov/pubmed/8052852" target="_blank"〉PubMed〈/a〉
    Keywords: Bacterial Proteins/metabolism ; *DNA Replication ; DNA, Bacterial/biosynthesis/genetics ; DNA-Binding Proteins/metabolism ; *Plasmids ; *Replicon ; Streptomyces/*genetics/metabolism ; Telomere ; Transformation, Bacterial
    Print ISSN: 0036-8075
    Electronic ISSN: 1095-9203
    Topics: Biology , Chemistry and Pharmacology , Computer Science , Medicine , Natural Sciences in General , Physics
    Published by American Association for the Advancement of Science (AAAS)
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  • 6
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    A broadband gyrotron backward-wave oscillator with tapered interaction structure and magnetic field (2015)
    American Institute of Physics (AIP)
    Details
    Publication Date: 2015-11-12
    Description: The gyro-monotron and gyrotron backward-wave oscillator (gyro-BWO) are the two oscillator versions of gyrotrons. While serving different functions, they are also radically different in the RF field formation mechanisms. The gyro-monotron RF field profile is essentially fixed by the resonant interaction structure, while the gyro-BWO possesses an extra degree of freedom in that the axial RF field profile is self-determined by the beam-wave interaction in a waveguide structure. The present study examines ways to utilize the latter feature for bandwidth broadening with a tapered magnetic field, while also employing a tapered waveguide to enhance the interaction efficiency. We begin with a mode competition analysis, which suggests the theoretical feasibility of broadband frequency tuning in single-mode operation. It is then shown in theory that, by controlling the RF field profile with an up- or down-tapered magnetic field, the gyro-BWO is capable of efficient operation with a much improved tunable bandwidth.
    Print ISSN: 1070-664X
    Electronic ISSN: 1089-7674
    Topics: Physics
    Published by American Institute of Physics (AIP)
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  • 7
    Electronic Resource
    Electronic Resource
    Type II mid-infrared quantum well lasers (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 68 (1996), S. 2976-2978 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Pulsed, optically pumped four-constituent Type-II (InAs-Ga1−xInxSb-InAs-AlSb) quantum well lasers emitting at 3.9–4.1 μm were observed to lase up to 285 K with a characteristic temperature T0 of 35 K for 170 K ≤Top≤270 K. A theoretical analysis predicts dramatic further improvements once the potential for suppressing Auger recombination is fully realized. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.116374
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  • 8
    Electronic Resource
    Electronic Resource
    Metal-sulfur-based air-stable passivation of GaAs with very low surface-state densities (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 76 (2000), S. 327-329 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: An air-stable electronic surface passivation for GaAs and other III–V compound semiconductors that employs sulfur and a suitable metal ion, e.g., Zn, and that is robust towards plasma dielectric deposition has been developed. Initial improvements in photoluminescence are twice that of S-only treatments and have been preserved for 〉11 months with SiOxNy dielectric encapsulation. Photoluminescence and x-ray photoelectron spectroscopies indicate that the passivation consists of two major components with one being stable for 〉2 years in air. This process improves heterojunction bipolar transistor current gain for both large and small area devices. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.125734
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  • 9
    Electronic Resource
    Electronic Resource
    InGaP/InGaAsN/GaAs NpN double-heterojunction bipolar transistor (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 76 (2000), S. 2262-2264 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have demonstrated a functional NpN double-heterojunction bipolar transistor (DHBT) using InGaAsN for the base layer. The InGaP/In0.03Ga0.97As0.99N0.01/GaAs DHBT has a low VON of 0.81 V, which is 0.13 V lower than in a InGaP/GaAs heterojunction bipolar transistor (HBT). The lower turn-on voltage is attributed to the smaller band gap (1.20 eV) of metalorganic chemical vapor deposition-grown In0.03Ga0.97As0.99N0.01 base layer. GaAs is used for the collector; thus the breakdown voltage (BVCEO) is 10 V, consistent with the BVCEO of InGaP/GaAs HBTs of comparable collector thickness and doping level. To alleviate the current blocking phenomenon caused by the larger conduction band discontinuity between InGaAsN and GaAs, a graded InGaAs layer with δ doping is inserted at the base–collector junction. The improved device has a peak current gain of seven with ideal current–voltage characteristics. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.126315
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  • 10
    Electronic Resource
    Electronic Resource
    InGaAsN/AlGaAs P-n-p heterojunction bipolar transistor (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 76 (2000), S. 2788-2790 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have demonstrated a functional P-n-p heterojunction bipolar transistor (HBT) using InGaAsN. The metalorganic-vapor-phase-epitaxy-grown Al0.3Ga0.7As/In0.03Ga0.97As0.99N0.01 HBT takes advantage of the narrower band gap energy (Eg=1.2 eV) of In0.03Ga0.97As0.99N0.01, which is lattice matched to GaAs. Compared with the Al0.3Ga0.7As/GaAs material system, the Al0.3Ga0.7As/In0.03Ga0.97As0.99N0.01 material system has a larger conduction-band offset, while the valence-band offset remains comparable. This characteristic band alignment is very suitable for P-n-p HBT applications. The device's peak current gain is 23, and it has a turn-on voltage of 0.77 V, which is 0.25 V lower than in a comparable P-n-p Al0.3Ga0.7As/GaAs HBT. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.126476
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