ISSN:
1662-9752
Source:
Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
Notes:
Defects are introduced into (11-20) highly N-doped 4H-SiC by one surface scratchfollowed by annealing at 550°C or 700°C with or without an additional compressive stress.The defects are planar and always consist of double stacking faults dragged by a pair ofpartial dislocations. In a pair, the partial dislocations have the same line direction, Burgersvector and core composition. All the identified gliding dislocations have a silicon core. Ananalysis of their expansion during annealing proves that C(g) partial segments can be createdbut that C(g) partial dislocations are immobile
Type of Medium:
Electronic Resource
URL:
http://www.tib-hannover.de/fulltexts/2011/0528/02/13/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.527-529.379.pdf
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