Publication Date:
2019-07-12
Description:
The distribution pattern of As, B, and P dopants during the solid-phase growth of CrSi2 on Si(100) was investigated using Rutherford backscattering spectroscopy and SIMS. The results demonstrated that all three dopants did redistribute during the formation of CrSi2 layers; however, the nature of redistribution was different for different dopants. While B and P were transported from the Si substrate to the surface of the growing CrS2 layer, As accumulated at the CrSi2/Si interface. The formation of silicide was found to be inhibited by large concentrations of As. A model was developed to explain these results.
Keywords:
SOLID-STATE PHYSICS
Type:
Journal of Applied Physics (ISSN 0021-8979); 64; 4187-419
Format:
text
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