ISSN:
1063-7826
Source:
Springer Online Journal Archives 1860-2000
Topics:
Electrical Engineering, Measurement and Control Technology
,
Physics
Notes:
Abstract Processes of defect formation are investigated in epitaxial PbSe:Tl films prepared by vacuum evaporation from molecular beams at various condensation temperatures from mixtures with a thallium content of 0–1.6 at. %. It is established that an increase in the content of the acceptor impurity in the film is accompanied by a significant increase in the number of selenium donor vacancies through the self-compensation mechanism. The thallium concentrations in the films are determined, along with the impurity transport coefficients, which vary from 0.82 to 0.44 as the condensation temperature varies from 250 °C to 350 °C. The carrier densities are calculated theoretically as a function of the thallium content in the films. The noticeable discrepancy between theory and experiment for thallium concentrations in the film N Tl〈0.3 at.% is attributed to the presence of growth-induced nonequilibrium donor defects in the sample, whose influence is taken into account by simply substituting their concentration into the electroneutrality equation. Estimates based on self-compensation theory lead to the conclusion that the films must be evaporated at T K 〉400 °C to obtain films having a low carrier density.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1134/1.1187641
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