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  • 1
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    Death receptor 5 mediated-apoptosis contributes to cholestatic liver disease (2008)
    National Academy of Sciences
    Details
    Publication Date: 2008-07-30
    Print ISSN: 0027-8424
    Electronic ISSN: 1091-6490
    Topics: Biology , Medicine , Natural Sciences in General
    Published by National Academy of Sciences
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    PAPER CURRENT
  • 2
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    Paleoseismicity of Two Historically Quiescent Faults in Australia: Implications for Fault Behavior in Stable Continental Regions (2008)
    Seismological Society of America
    Details
    Publication Date: 2022-06-08
    Description: Paleoseismic studies of two historically aseismic Quaternary faults in Australia confirm that cratonic faults in stable continental regions (SCR) typically have a long-term behavior characterized by episodes of activity separated by quiescent intervals of at least 10,000 and commonly 100,000 years or more. Studies of the approximately 30-km-long Roopena fault in South Australia and the approximately 30-km-long Hyden fault in Western Australia document multiple Quaternary surface-faulting events that are unevenly spaced in time. The episodic clustering of events on cratonic SCR faults may be related to temporal fluctuations of fault-zone fluid pore pressures in a volume of strained crust. The long-term slip rate on cratonic SCR faults is extremely low, so the geomorphic expression of many cratonic SCR faults is subtle, and scarps may be difficult to detect because they are poorly preserved. Both the Roopena and Hyden faults are in areas of limited or no significant seismicity; these and other faults that we have studied indicate that many potentially hazardous SCR faults cannot be recognized solely on the basis of instrumental data or historical earthquakes. Although cratonic SCR faults may appear to be nonhazardous because they have been historically aseismic, those that are favorably oriented for movement in the current stress field can and have produced unexpected damaging earthquakes. Paleoseismic studies of modern and prehistoric SCR faulting events provide the basis for understanding of the long-term behavior of these faults and ultimately contribute to better seismic-hazard assessments.
    Description: Published
    Description: 1913-1934
    Description: 3.2. Tettonica attiva
    Description: JCR Journal
    Description: reserved
    Keywords: palaeoseismology ; Australia ; fault behavior ; stable continental regions ; 04. Solid Earth::04.04. Geology::04.04.01. Earthquake geology and paleoseismology
    Repository Name: Istituto Nazionale di Geofisica e Vulcanologia (INGV)
    Type: article
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    PAPER (OA)
  • 3
    Electronic Resource
    Electronic Resource
    Thermal modelling in shallow subduction: an application to low P/T metamorphism of the Cretaceous Shimanto Accretionary Complex, Japan (2002)
    Oxford, UK : Blackwell Science Inc
    Journal of metamorphic geology 20 (2002), S. 0 
    Details
    ISSN: 1525-1314
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Geosciences
    Notes: This paper presents the results of numerical modelling to investigate the regional occurrence of prehnite-bearing metamorphic rocks at shallow levels in subduction zones. The modelling assumes a simple geometrical configuration in which the thermal structure in a prism is controlled by boundary conditions at the top and base of the prism. It is expected that the predominant metamorphic facies in a prism will change with decreasing age of the descending slab. The results of thermal modelling show that the facies boundary between pumpellyite–actinolite and prehnite–actinolite facies (including prehnite–pumpellyite facies) overlaps with an array of P–T conditions in the prism when the age of a descending slab is younger than 10 Myr. This implies that the change of the predominant metamorphic facies from pumpellyite–actinolite to prehnite–actinolite facies will switch drastically. The critical age of the switch depends on subduction parameters. In particular, the critical age of the descending slab is 〈5 Myr in the case of no shear heating, with a subduction rate of v=75–200 mm y−1 and subduction angle of θ=5–15°. For shear heating (constant shear stress=30 MPa) with a subduction rate of v=75 mm y−1 and subduction angle of θ=10° the critical age is 7 Myr. To test this switching behaviour in the development of prehnite–actinolite facies in the prism, petrologic data from the Cretaceous Shimanto Accretionary Complex (CSAC) in Kyushu, Japan were compiled. The regional occurrence and mineral assemblages of prehnite-bearing metamorphic rocks suggest that the most of CSAC was metamorphosed under prehnite–actinolite facies. This conclusion is consistent with subduction of a young, hot slab, as has been proposed based on other geological observations. This suggests that the regional extent of the prehnite–actinolite facies metamorphic rocks may be a unique evidence for the subduction of a young, hot slab.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1046/j.1525-1314.2002.00380.x
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  • 4
    Electronic Resource
    Electronic Resource
    Infrared absorption in boron-doped diamond thin films (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 58 (1991), S. 1908-1910 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Detailed studies of infrared absorption in nominally undoped and boron-doped, free-standing diamond thin films are reported. Difference measurements reveal absorption at 1300 cm−1 (0.16 eV) due to boron-induced single phonon, vibronic excitations. A relatively sharp peak at about 2420 cm−1 (0.30 eV), a stronger, broader band centered at 3060 cm−1 (0.38 eV), and a weak, broad peak at 4200 cm−1 (0.52 eV), are identified as electronic transitions, with or without phonon assistance, of the boron acceptor. These results provide important confirmation of the hitherto presumed substitutional nature of boron doping and recent suggestions concerning electronic transport mechanisms in diamond thin films.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.105070
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  • 5
    Electronic Resource
    Electronic Resource
    Photosensitization of diamond thin films (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 56 (1990), S. 1898-1900 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Photosensitization of diamond thin films, prepared by the hot-filament technique, has been achieved with thin overcoatings of hydrogenated amorphous silicon. It is observed that injection of electrons, photogenerated in the amorphous silicon, proceeds with efficiencies approaching unity. To reconcile this with the reported electron energy structures of these two materials, the presence of localized, acceptor-like states 2 eV above the valence band of diamond must be invoked. In addition their density must be sufficiently high to account for the inferred lower limit of 10−8 cm2 /V for the electron range.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.103057
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  • 6
    Electronic Resource
    Electronic Resource
    Boron doping of diamond thin films (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 55 (1989), S. 1121-1123 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The electrical conductivity of diamond thin films produced by the hot-filament technique is found to increase when diborane is incorporated in the precursor gas mixture. The combination of well-defined bulk conductivity measurements with quantitative secondary-ion mass spectrometry and Raman spectroscopy shows that the conductivity increase is associated with atomic boron doping and rules out any significant role for a graphitic-type component.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.101676
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  • 7
    Electronic Resource
    Electronic Resource
    Lithium doping and photoemission of diamond thin films (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 57 (1990), S. 1907-1909 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Diamond films have been in-diffused with lithium in an effort to produce n-type diamond by interstitial doping. Although lithium incorporation was established, only small changes in electrical conductivity and no thermionic emission from donor levels, which should lie only a few tenths of an electron volt below the vacuum level, were observed. To account for these observations, studies of the spectral dependence of external photoemission of lithium-doped and undoped films were undertaken. These indicate that the lithium donors are compensated by high densities of acceptor states distributed over several electron volts. This first, direct observation of band-gap states in diamond films accounts for a number of reported properties including their relatively high electrical conductivity and small field effect.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.104008
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  • 8
    Electronic Resource
    Electronic Resource
    Density of states distribution in diamond thin films (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 59 (1991), S. 455-457 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Space-charge-limited hole currents in nominally undoped diamond thin films have been studied using thin, highly boron-doped (p+) diamond layers as injecting contacts. The results obtained from these p+-p-Si structures have been analyzed to determine, for the first time, the bulk distribution of localized states N(E) in polycrystalline diamond thin films. The values of N(E), covering an energy range of about 0.8–0.6 eV above the valence band, indicate that the density of states at 0.8 eV is about 1015 cm−3 eV−1 but rises rapidly, within the 0.2 eV, to about 1018 cm−3 eV−1.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.105461
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  • 9
    Electronic Resource
    Electronic Resource
    Compensation effects in nitrogen-doped diamond thin films (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 59 (1991), S. 3148-3150 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Diamond thin films have been doped with nitrogen during growth by the hot-filament technique. For nitrogen concentrations in the films, determined by quantitative secondary ion-mass spectroscopy (SIMS) exceeding about 3×1018 atoms/cc, a decrease of several orders of magnitude is observed in the electrical conductivity for temperatures at or above room temperature. Qualitatively, this decrease is as expected, assuming compensation of existing acceptor states in nominally undoped diamond thin films by substitutional nitrogen which is known to introduce a deep-lying donor level.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.105767
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  • 10
    Electronic Resource
    Electronic Resource
    Activation energy for the C49-to-C54 phase transition of polycrystalline TiSi2 films with arsenic impurities (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 62 (1993), S. 2634-2636 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The C49-to-C54 transition in TiSi2 was investigated using samples having submicron line width film, by an x-ray diffraction technique. Arrhenius plots of the transition rate show that the C49-to-C54 transition of polycrystalline TiSi2 films with arsenic impurities have an activation energy barrier strongly dependent on the arsenic concentration. The energy increases as a function of arsenic impurity concentration, from 3.5 eV for TiSi2 formed on Si substrate ion implanted with the dose of 2×1015 cm−2, to 7.8 eV with the dose of 5×1015 cm−2. The annealing time dependence of the x-ray intensity on (004) orientation indicates that TiSi2 formed on Si substrate with the arsenic dose of 2×1015 cm−2 shows a diffusion-limited process and that with the dose of 5×1015 cm−2 shows an interface-limited process. The arsenic precipitates act to pin the C49 phase in the C49-to-C54 transition.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.109269
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