ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
A new type of a Schottky diode photodetector based on the ultrathin (10 nm) low-temperature grown GaAs-on-Si heterolayer was fabricated and studied. Properties of the heterostructure and electrical characteristics of the photodetector were determined using low-temperature photoluminescence, high-resolution transmission electron microscopy, capacitance–voltage, current–voltage, and spectral responsivity measurements. The high responsivity of the photodetector (corresponding to external quantum efficiency of 0.8–0.9) is explained by effective carriers separation in the GaAs layer and by the carrier multiplication effect at the GaAs/Si interface. © 1996 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.361374
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