Electronic Resource
[S.l.]
:
American Institute of Physics (AIP)
Journal of Applied Physics
81 (1997), S. 2916-2918
ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Position lifetime measurement for SixGe1−x bulk crystals has been performed. The bulk lifetime of positron in the crystals varied between those for Ge and Si. The dependence of the lifetime on the alloy composition showed an abrupt change at x=0.17–0.20 which seems to be correlated with that of the band gap energy. After 3 MeV electron-irradiation, vacancy-type defects giving rise to the lifetimes of ∼280 and ∼330 ps were detected for 0.63≤x≤0.82 and 0.20≤x≤0.40, respectively, but not for x≤0.17. The composition-dependent vacancy production was interpreted in terms of the thermal stability of vacancies with the composition. © 1997 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.363965
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