ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
The radiation hardness of fluorinated SiO2/Si interface in metal-oxide-semiconductor field-effect transistors has been found to depend strongly on the amount of fluorine introduced. In this study, the fluorine was introduced by low-energy F implantation onto the surface of the polycrystalline silicon gate electrode, followed by annealing at 950 °C to diffuse F into the gate SiO2 toward the SiO2/Si interface. The improved radiation hardness is attributed to the strain relaxation near the SiO2/Si interface by fluorine incorporation.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.344012
Permalink