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  • 1
    Digitale Medien
    Digitale Medien
    Electronic structure and optical properties of SrCu2O2 (2002)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 91 (2002), S. 3074-3078 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: The electronic structure of SrCu2O2, a wide gap (∼3.3 eV) p-type oxide semiconductor, was examined by photoelectron and optical spectroscopy. The spectroscopy results were compared with the energy band structure calculated by the local density approximation method to clarify the origins of p-type conductivity in this material. Despite the significant difference in band gap energy, the basic electronic structure around the band gap region was found to be quite similar to that of Cu2O. Thus, the 3d−4sp orbital of Cu+ ion is hybridized with the 2p orbital of ligand O2− ions due to the covalency of Cu–O bonds, to form states near the valence band maximum; the conduction band minimum is predominantly composed of the hybridized orbital of Cu 4sp and O 2p, forming the direct band gap at Γ point. A sharp absorption band observed near the fundamental absorption edge is likely attributable to an exciton. Although the corresponding exciton emission was not observed near the absorption edge, a blue-green emission band (Stokes shift of ∼1 eV) was observed at ∼2.47 eV. The emission is presumably attributable to intra-atomic transitions of Cu+, partially allowed by p-orbital mixing into s and d orbitals. © 2002 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.1445498
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  • 2
    Digitale Medien
    Digitale Medien
    Novel laser flash technique to measure thermal effusivity of highly viscous liquids at high temperature (2001)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 72 (2001), S. 1899-1903 
    Details
    ISSN: 1089-7623
    Quelle: AIP Digital Archive
    Thema: Physik , Elektrotechnik, Elektronik, Nachrichtentechnik
    Notizen: A simple but useful experimental technique featuring a novel configuration for a sample cell, high-speed infrared detector and a heating pulse laser has been developed to obtain reliable thermal effusivity of a highly viscous liquid at high temperature. The sample is melted in a platinum crucible and heated to the desired temperature. A single laser pulse is flashed on the bottom of the platinum crucible and the infrared ray irradiated from the same bottom surface is measured to obtain the temperature decay, from which the thermal effusivity of the liquid sample can be estimated. The usefulness and validity of this new laser flash technique were successfully confirmed by measuring the thermal effusivity of silicate glass in the temperature range between 773 and 1673 K. © 2001 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.1347968
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  • 3
    Digitale Medien
    Digitale Medien
    Surface morphology and crystal quality of low resistive indium tin oxide grown on yittria-stabilized zirconia (2002)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 91 (2002), S. 3547-3550 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Highly electrically conductive (resistivity: 1×10−4 Ω cm) indium tin oxide (ITO) thin films were grown heteroepitaxially on (111) and (100) surfaces of yttria-stabilized zirconia (YSZ) at a growth temperature of 900 °C using a pulsed-laser deposition technique, and their crystal quality and surface morphology were evaluated by using high-resolution x-ray diffraction and an atomic force microscope. Higher growth temperature, the use of a cleaved surface as a substrate, and an increase in oxygen pressure are essential to fabricate an ITO thin film with an atomically flat surface. The full width at half maximum of out-of-plane x-ray rocking curves of ITO (222) grown on YSZ (111) and of ITO (400) on YSZ (100) were 54 and 720 arcseconds, respectively, which indicates that (111)-oriented ITO films exhibited higher crystal quality than (100)-oriented ITO films. The ITO film was grown on YSZ (111) by the three-dimensional spiral growth mode, with flat terraces and steps corresponding to (222) plane spacing of 0.293 nm, and the grain size was reduced with increasing oxygen pressure during ITO film growth, to improve overall surface flatness. On the other hand, only a columnar structure was observed in the (100)-oriented ITO film surface. © 2002 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.1448873
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  • 4
    Digitale Medien
    Digitale Medien
    Fabrication and characterization of ultraviolet-emitting diodes composed of transparent p-n heterojunction, p-SrCu2O2 and n-ZnO (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 5720-5725 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: An ultraviolet light-emitting diode (UV-LED) was realized using a p-n heterojunction composed of the transparent oxide semiconductors p-SrCu2O2 and n-ZnO. A Ni/SrCu2O2/ZnO/ITO multilayered film was epitaxially grown on an extremely flat YSZ (111) surface by a pulsed-laser deposition technique. SrCu2O2 (112) was preferentially grown on ZnO (0001) at 350°C, while the preferential plane was changed into the (100) when the temperature was increased to 600 °C. The grown films were processed by conventional photolithography followed by reactive ion etching to fabricate heterojunction diodes. The resulting devices exhibited rectifying I-V characteristics inherent to p-n junctions. A relatively sharp electroluminescence band centered at 382 nm, attributed to transitions associated with exciton-exciton collision or electron-hole plasma in ZnO, was generated by applying a forward bias voltage greater than the turn-on voltage of 3 V. UV-LED performance characteristics such as threshold current and conversion efficiency improved with higher SrCu2O2 deposition temperatures. On the other hand, increased laser power density at 600 °C during deposition raised the incidence of insulating layer formation between the p and n layers, probably due to migration of K+ ions doped as an acceptor impurity. The resulting p-i-n diode emits broad luminescence centered at 500 nm for forward voltage greater than 14 V. © 2001 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.1367315
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  • 5
    Digitale Medien
    Digitale Medien
    New attempt for measuring thermal diffusivity of thin films by means of a laser flash method (1989)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 60 (1989), S. 317-321 
    Details
    ISSN: 1089-7623
    Quelle: AIP Digital Archive
    Thema: Physik , Elektrotechnik, Elektronik, Nachrichtentechnik
    Notizen: A new facility and its requirements have been developed for the measurement of the thermal diffusivity of thin films or ribbons which are less than about 100 μm in thickness, using a laser flash method. In this method, a pulsed laser beam which has a narrow line-shaped cross section compared with the length of the sample is flashed onto the front surface of the sample. The temperature response at the back surface at a certain distance away from the line-shaped illuminated area of the laser beam is measured by an infrared detector. The thermal diffusivity value can be estimated from the time required for the temperature to reach the half of the maximum temperature rise finally acquired. The usefulness of the present facility has been demonstrated by measuring successfully thermal diffusivities of thin foils of platinum (25 μm) and of copper (18 μm). This method can be applied to the samples having various thermal diffusivities, particularly in cases where the conventional method using a thermocouple is found to be technically difficult. For example, a thin fragile sample for which it is almost impossible to weld the temperature detecting device onto it.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.1140430
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  • 6
    Digitale Medien
    Digitale Medien
    Thermal diffusivity measurements of molten salts using a three-layered cell by the laser flash method (1990)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 61 (1990), S. 2645-2649 
    Details
    ISSN: 1089-7623
    Quelle: AIP Digital Archive
    Thema: Physik , Elektrotechnik, Elektronik, Nachrichtentechnik
    Notizen: A simple cell and easy data processing are described for measuring the thermal diffusivity of a liquid sample at high temperatures using the laser flash method. A cell consists of a liquid sample sandwiched by two metallic plates. The front surface of one metallic plate is exposed to a single pulse of beam laser and the resulting temperature rise of the back surface of the other metallic plate is measured. The logarithmic analysis proposed by James using the initial time region of the temperature response curve of a two layered cell system has been extended to apply to the present three layered cell system in order to estimate the thermal diffusivity value of a liquid sample. Measurements of distilled water and methanol were made first and the results were found to be in good agreement with the reference data. Then, the thermal diffusivities of molten NaNO3 at 593–660 K and of molten KNO3 at 621–694 K were determined and the results also appear to agree reasonably well with those reported in the literature.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.1141853
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  • 7
    Digitale Medien
    Digitale Medien
    Deep-ultraviolet transparent conductive β-Ga2O3 thin films (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 77 (2000), S. 4166-4168 
    Details
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Thin films of β-Ga2O3 with an energy band gap of 4.9 eV were prepared on silica glass substrates by a pulsed-laser deposition method. N-type conductivity up to ∼1 S cm−1 was obtained by Sn-ion doping and deposition under low O2 partial pressure (∼10−5 Pa) at substrate temperatures above 800 °C. The resulting internal transmittance at the wavelength (248 nm) of the KrF excimer laser exceeded 50% for the 100-nm-thick film, making this the most ultraviolet-transparent conductive oxide thin film to date and opening up prospects for applications such as ultraviolet transparent antistatic electric films in ultraviolet lithography. © 2000 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.1330559
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  • 8
    Digitale Medien
    Digitale Medien
    Highly electrically conductive indium–tin–oxide thin films epitaxially grown on yttria-stabilized zirconia (100) by pulsed-laser deposition (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 76 (2000), S. 2740-2742 
    Details
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Highly electrically conductive indium–tin–oxide thin films were epitaxially grown on an extremely flat (100) surface of yttria-stabilized zirconia single-crystal substrates at a substrate temperature of 600 °C by a pulsed-laser deposition technique. A resistivity down to 7.7×10−5 Ω cm was reproducibly obtained, maintaining optical transmission exceeding 85% at wavelengths from 340 to 780 nm. The carrier densities of the films were enhanced up to 1.9×1021 cm−3, while the Hall mobility showed a slight, almost linear, decrease from 55 to 40 cm2 V−1 s−1 with increasing SnO2 concentration. The low resistivity is most likely the result of the good crystal quality of the films. © 2000 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.126461
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  • 9
    Digitale Medien
    Digitale Medien
    Heteroepitaxial growth of a wide-gap p-type semiconductor, LaCuOS (2002)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 81 (2002), S. 598-600 
    Details
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: High-quality epitaxial films of LaCuOS, a wide-gap p-type semiconductor, are grown on yittria-stabilized-zirconia (001) or MgO (001) single-crystal substrates by a unique method. Postannealing of a bilayer film composed of an extremely thin metallic copper layer and an amorphous LaCuOS layer at 1000 °C results in an epitaxially grown LaCuOS thin film. This thin copper layer with high orientation, which likely acts as an epitaxial initiator, is essential for epitaxial growth. The resulting epitaxial films exhibit relatively intense ultraviolet emission associated with excitons at room temperature, confirming the high crystal quality of the films. © 2002 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.1494853
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  • 10
    Digitale Medien
    Digitale Medien
    Current injection emission from a transparent p–n junction composed of p-SrCu2O2/n-ZnO (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 77 (2000), S. 475-477 
    Details
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: An ultraviolet light-emitting diode (LED) operating at room temperature was realized using a p–n heterojunction composed of transparent conductive oxides, p-SrCu2O2 and n-ZnO. Multilayered films prepared by a pulsed-laser deposition technique were processed by conventional photolithography with the aid of reactive ion etching to fabricate the LED device. A rather sharp emission band centered at 382 nm was generated when a forward bias voltage exceeding the turn-on voltage of 3 V was applied to the junction. The emission may be attributed to a transition associated with the electron–hole plasma of ZnO. © 2000 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.127015
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