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  • 1
    Electronic Resource
    Electronic Resource
    Charged particle densities and kinetics in a radio-frequency SF6 plasma (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 7221-7230 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Electron, negative ion, and positive ion densities in a capacitively-coupled radio-frequency (rf, 13.56 MHz) SF6 plasma have been investigated as functions of the pressure (30–700 mTorr) and rf power. The decay of the charged particle densities in the afterglow has also been studied to obtain information about their kinetics. The electron density was determined by using a microwave cavity resonance technique. Negative ions were detected by measuring the density of photodetached electrons produced by pulsed laser irradiation of the plasma. The positive ion density was obtained from Langmuir probe measurements. At a rf power of 0.13 W/cm2 and at low pressures ((approximately-less-than)100 mTorr) the positive ion density, which is virtually equal to the negative ion density, is found to be larger than the electron density by a factor of a few hundred; the ion/electron density ratio increases with increasing pressure to reach a value of a few thousand at high pressures. Wavelength-dependent photodetachment measurements indicate that the dominant contribution to the photodetachment signal at 266 nm comes from F−, but F− is a minor negative-ion species with respect to the density; that is, the photodetachment efficiency for the dominant negative ion species (supposed to be SF−5) is low. The recombination rate constant for F− (supposedly with SF+5) is suggested to be an order of magnitude larger than that for the dominant ion species, the latter being estimated to be slightly smaller than 10−7 cm3 s−1. © 1994 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.358003
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  • 2
    Electronic Resource
    Electronic Resource
    Substrate temperature lowering in GaAs selective epitaxial growth by molecular-beam epitaxy (1989)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 66 (1989), S. 3413-3415 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: GaAs selective epitaxial growth by molecular-beam epitaxy (MBE) was studied as a function of substrate temperature. Selectivity was observed at as low as 600 °C with 1×10−5 Torr As pressure and a 0.04 μm/h growth rate. The heterogeneous nucleation theory gives a good explanation for the selectivity dependence on substrate temperature. Selective epitaxial growth by MBE is promising for device applications which require thin localized epilayers.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.344094
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  • 3
    Electronic Resource
    Electronic Resource
    Chemical dry etching of GaAs and InP by Cl2 using a new ultrahigh-vacuum dry-etching molecular-beam-epitaxy system (1989)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 65 (1989), S. 168-171 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Damage and contamination-free chemical dry etching of (100)GaAs and (100)InP by Cl2 was demonstrated using a new ultrahigh-vacuum dry-etching molecular-beam-epitaxy (MBE) system. This system consists of a combined etching chamber, an MBE chamber, and a sample preparation chamber, all at ultrahigh vacuum. A mirrorlike surface was obtained after etching at substrate temperatures ranging from 300 to 400 °C for GaAs, and from 200 to 400 °C for InP. In situ reflection high-energy electron diffraction observations were accomplished for GaAs, with a mirrorlike surface after etching, and (2×4) surface reconstruction was observed. Results show that a smooth surface was formed at an atomic level.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.342564
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  • 4
    Electronic Resource
    Electronic Resource
    Novel slip-free rapid thermal annealing of GaAs in vacuum with excellent uniformity and reproducibility (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 1294-1299 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: This paper describes novel rapid thermal annealing for GaAs wafers under vacuum conditions (VRTA) using a three-zone lamp power control method. The developed RTA technology eliminates generation of crystallographic slip lines and wafer deformation due to the convection effect caused by ambient gas. A three-zone lamp power control method produced excellent uniformity in the activated layer, presenting the best data ever attained by RTA. Also, numerical simulation demonstrates improved temperature uniformity achieved by a three-zone lamp power control method which reduces the edge radiation effect. Moreover, we have found that VRTA technology is particularly effective for annealing large-size GaAs wafers, which are more easily deformed or slip-lined than 2-in. wafers. We have applied VRTA to fabricating ion-implanted n+ contact regions for self-aligned 0.5-μm-gate doped-channel hetero-metal-insulator-semiconductor field-effect transistors with a lightly doped drain, and have obtained excellent Vt uniformity, σVt=19 mV, on a 2-in.-diam wafer. These features, together with a simple wafer-supporting method, using several quartz pins, cause the improved VRTA technology to provide high throughput and production yield for high-performance short-gate GaAs integrated circuits.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.347263
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  • 5
    Electronic Resource
    Electronic Resource
    Dependence of the magnetization in YBa2Cu3O7−x thin films on the applied magnetic field direction (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 58 (1991), S. 2833-2835 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The dependence of the magnetization on the applied magnetic field direction was investigated at 5 K on superconducting thin films of YBa2Cu3O7−x prepared by ArF laser ablation with the c axis perpendicular to the film plane. The difference of the magnetic moment between the increasing and decreasing branches of the hysteresis curves at zero field depends on the angle θ between the film normal and the magnetic field as ||cos θ||. This result can be attributed to the magnetic moment perpendicular to the film plane.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.104750
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  • 6
    Electronic Resource
    Electronic Resource
    Superconductivity and crystallinity of Ba2Y1Cu3O7−δ thin films prepared by pulsed laser deposition with substrate bias voltage (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 6331-6335 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Substrate bias voltages were found to be significantly effective in preparing high-quality laser-deposited superconducting Ba2Y1Cu3O7−δ films at reduced substrate temperatures. The zero-resistance temperature of the biased films, positive bias being more effective than negative, decreased very slightly when the substrate temperature was lowered, whereas that of the unbiased films decreased considerably. In addition, the surface morphology and c-axis orientation have been improved by applying substrate bias voltages. Bias voltages within ±500 V hardly affect the composition of the resulting films so that stoichiometric films have been obtained from a stoichiometric target. A time-resolved optical observation revealed that a short time emission, probably being oxygen plasma, occurred in a few μs after the laser pulse impingement. The improvement in crystallinity of the resulting films is attributed to this emission. The velocity of emissive species in the plume was determined to be 6×105 cm/s. Under positive-biased conditions slower components with a velocity of 3×105 cm/s or less were also observed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.346877
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  • 7
    Electronic Resource
    Electronic Resource
    Selective epitaxial growth of gallium arsenide by molecular beam epitaxy (1987)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 51 (1987), S. 1512-1514 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: GaAs was selectively grown on GaAs substrates patterned with SiO2 by conventional molecular beam epitaxy (MBE). No growth was found on SiO2, except for small GaAs particles, when the substrate temperature was above 700 °C under 1.2×10−5 Torr arsenic pressure. With the increase in the substrate temperature, the selectivity was better while the growth rate decreased. At 775 °C, no growth occurred, even on GaAs. Selective epitaxial growth of GaAs by MBE is promising for application to device fabrications.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.98619
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  • 8
    Electronic Resource
    Electronic Resource
    Direct observation of ions in laser plume onto the substrate (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 59 (1991), S. 597-599 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Direct observation of ions in the laser plume of YBa2Cu3O7−δ was carried out by time-of-flight mass spectroscopy. The direct observation of the species impinging onto the substrate is very important in order to clarify the kinetics of the film formation, so ion sampling was done through the orifice set at the position of the substrate. Thus the results indicate directly the species of ions incident onto the substrate during laser deposition. The analysis of the ion energies was also carried out. Atomic, monoxide, and cluster ions were observed in the laser plume and their energies were determined to be around 200, several tens and a few eV, respectively.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.105397
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  • 9
    Electronic Resource
    Electronic Resource
    Y2O3 single crystalline substrate for epitaxial growth of high TC superconducting thin films (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 59 (1991), S. 1902-1904 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The c-axis oriented YBa2Cu3Ox (YBCO) film has been epitaxially grown on Y2O3 (001) substrates by in situ processing for the first time to our knowledge. The in-plane orientation relationship between YBCO and Y2O3 is 〈110〉YBCO(parallel)〈100〉Y2O3. The film exhibits, as deposited, T0C=86.2 K, ΔT=1.2 K; JC=1.4×107 and 2.0×106 A/cm2 in a magnetic field of 0 and 5 T at 5 K, respectively. Moreover, the interface between the YBCO and Y2O3 is very sharp and chemically stable.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.106183
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  • 10
    Electronic Resource
    Electronic Resource
    Cumulative laser irradiation effects on ions in the plume of YBa2Cu3O7−δ and particulates at the film surface (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 59 (1991), S. 2950-2952 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Direct observations of ions in the laser plume of YBa2Cu3O7−δ impinging onto a substrate surface revealed the increase of heavy species in the plume after multiple laser pulses on the YBa2Cu3O7−δ target. The beginning of heavy species emission from the target was observed at around 100 laser beam pulses (1 J/cm2) in our experiments. Particulate formation at the film surface was observed in the film deposited under this condition.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.105808
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