ISSN:
1662-9752
Source:
Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
Notes:
The gamma-ray irradiation causes positive charge traps formation in silicon dioxide filmsand at silicon dioxide - silicon interface of MOS devices, and the threshold voltage shift in MOStransistors. Here, the Monte Carlo model was used to develop an approach for estimating gammarayinduced traps spatially distributed in silicon dioxide films. This is combined with the model ofenergy distributed traps at silicon dioxide - silicon interface. The developed model enables gammarayinduced charge and threshold voltage shift determination as a function of gamma-ray doses. Thethreshold voltage measurements at a single specified current, both of radiation sensitive andradiation hardened MOS transistors irradiated with different doses of gamma-ray are compared withthe developed model and good agreement are obtained
Type of Medium:
Electronic Resource
URL:
http://www.tib-hannover.de/fulltexts/2011/0528/02/16/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.555.147.pdf
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