Publication Date:
2014-12-06
Description:
The impact of thermal post deposition annealing in oxygen at different temperatures on the Ge/Y 2 O 3 interface is investigated using metal oxide semiconductor capacitors, where the yttrium oxide was grown by atomic layer deposition from tris(methylcyclopentadienyl)yttrium and H 2 O precursors on n-type (100)-Ge substrates. By performing in-situ X-ray photoelectron spectroscopy, the growth of GeO during the first cycles of ALD was proven and interface trap densities just below 1 × 10 11 eV −1 cm −2 were achieved by oxygen annealing at high temperatures (550 °C–600 °C). The good interface quality is most likely driven by the growth of interfacial GeO 2 and thermally stabilizing yttrium germanate.
Print ISSN:
0021-8979
Electronic ISSN:
1089-7550
Topics:
Physics
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