Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
79 (2001), S. 521-523
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
We present a theoretical study of the optical matrix elements and radiative lifetime for the ground state optical transitions in GaN/AlN quantum dots (QD). An efficient plane-wave expansion method is used to calculate the energy levels, wave functions, and optical matrix elements in the framework of a multiband k⋅p model taking account of the three-dimensional strain and built-in electric field distributions for QDs with a hexagonal truncated-pyramid shape. We demonstrate that the built-in electric field determines the energy spectrum of GaN/AlN QDs and leads to a dramatic decrease in the optical matrix element with increasing QD size. As a result, the radiative lifetime for the ground state optical transition increases strongly with QD size. The theoretical results obtained are in good agreement with available experimental data. © 2001 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.1386405
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