ISSN:
1573-4854
Schlagwort(e):
porous silicon
;
Raman spectroscopy
;
morphology
Quelle:
Springer Online Journal Archives 1860-2000
Thema:
Chemie und Pharmazie
,
Maschinenbau
Notizen:
Abstract Raman-light scattering in porous silicon samples with oriented quantum wires was studied. It was shown, that the experimental data depends on the type of organization of wire system. The explanation of observed effect is discussed.
Materialart:
Digitale Medien
URL:
http://dx.doi.org/10.1023/A:1009632114501
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