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  • 1
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 5619-5623 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Persistent spectral hole burning (PSHB) and light-induced absorption spectra with the pump of burning light were measured and studied in the Sm2+-doped xAl2O3⋅(100−x)SiO2 glasses to reveal the electron transfer and the formation of PSHB at room temperature. It was observed that the density of Sm2+ at the burnt sites decreased, while that of Sm3+ increased after the burning. The hole depth increased with the increase of Al2O3 concentration. The formation of PSHB is attributed to a one-step electron transfer by tunneling through the excited state, 5D0. The traps that capture the electrons produced by the ionization of Sm2+ may be related to the oxygen vacancies. In addition, the thermal activated barrier height between the burnt and unburnt configuration was estimated as ∼1.0 eV by thermal hole filling. © 1999 American Institute of Physics.
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  • 2
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 2200-2205 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: By using the fluorescence line-narrowing technique, we observed a broad fluorescence band in the vicinity of a resonant line of the 5D0→7F0 transition in an Eu3+-doped SiO2 glass synthesized by a sol-gel process. The comparison with a similar line in an Al2O3–SiO2:Eu3+ sol-gel glass revealed the existence of a chemical cluster of Eu3+ and O2− in the tetrahedral SiO4 network. The broad fluorescence band was attributable to an energy migration among the Eu3+ ions for the site-selectively received excitation energy. Also, based on Yokota–Tanimoto's energy diffusion model, the fluorescence decay curves for the 5D0→7F2 transition were closely correlated with the energy migration and gel–glass transformation. The gel-shrinkage and reduced interatomic distance between Eu3+ ions due to a thermal treatment at higher temperature definitely resulted in a decrease in the associated lifetime of the initial decay. © 2001 American Institute of Physics.
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  • 3
    Electronic Resource
    Electronic Resource
    Westerville, Ohio : American Ceramics Society
    Journal of the American Ceramic Society 86 (2003), S. 0 
    ISSN: 1551-2916
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: The effect of zirconium ions on glass structure and proton conductivity was investigated for sol-gel-derived P2O5–SiO2 glasses. Porous glasses were prepared through hydrolysis of PO(OCH3)3, Zr(OC4H9)4, and Si(OC2H5)4. Chemical bonding of the P5+ ions was characterized using 31P-NMR spectra. The phosphorous ions, occurring as PO(OH)3 in the ZrO2-free glass, were polymerized with one or two bridging oxygen ions per PO4 unit with increased ZrO2 content. The chemical stability of these glasses was increased significantly on the addition of ZrO2, but the conductivity gradually decreased from 26 to 12 mS/cm at room temperature for 10P2O5·7ZrO2·83SiO2 glass. A fuel cell was constructed using 10P2O5·5ZrO2·85SiO2 glass as the electrolyte; a power of ∼4.5 mW/cm2 was attained.
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  • 4
    Electronic Resource
    Electronic Resource
    Westerville, Ohio : American Ceramics Society
    Journal of the American Ceramic Society 84 (2001), S. 0 
    ISSN: 1551-2916
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: The effect of phosphorus ions on the proton conductivity was examined for the sol–gel-derived glasses. The porous glasses were prepared through hydrolysis of PO(OCH3)3 and Si(OC2H5)4, in which the phosphorus ions consisted of the POH bonds and were dissolved into the silica matrix without any P-O-Si bond. The electrical conductivity increased in a humid atmosphere and reached ∼30 mS/cm at 50°C under 70% RH. High conductivity is achieved by both the POH bonds and the molecular water bonded to the POH bonds. The conductivity increased with a change in humidity from 40% to 80% RH. The phosphorus ions were selectively dissolved in water, resulting in a lower conductivity.
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  • 5
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 409-414 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The fluorescence properties of Sm2+ ions incorporated in silicate glasses were investigated using steady-state and laser-induced line narrowing techniques. Sm2+ ions were incorporated in the glass matrix by heating the Sm3+ ion-containing glasses in H2 gas. The reaction of Sm3+ into Sm2+ was accelerated with increasing temperature. The fluorescence intensity of the Sm2+ ions increased with heating to 800 °C. Further heating above 900 °C precipitated mullite crystals. Accordingly, the fluorescence intensity of the Sm2+ ions abruptly decreased and the fluorescence of Sm3+ ions again appeared. Sm2+ ions are preferentially coordinated with Al–O polyhedrons. The crystallization of mullite induces the decrease in Al2O3 content in the remaining glassy phase, resulting in the redox equilibrium producing the high valence samarium ion. Three Stark splitting fluorescence peaks of the 5D0→7F1 transition were analyzed to determine the parameters of the crystal field surrounding the Sm2+ ion. The decrease in the number of Al–O bonds surrounding Sm2+ causes the Sm2+ ions' coordination number to decrease with the short distance of the Sm–O bonds. © 1996 American Institute of Physics.
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  • 6
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 4276-4278 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Borosilicate glass films nominally containing up to 40 wt% ZnSe semiconductor crystallites have been successfully prepared on silica glass substrates by the sol-gel process. The influence of heat treatment on optical absorption, emission, and excitation properties was studied. On heating the films at temperatures from 500 to 750 °C in a hydrogen atmosphere, small ZnSe crystallites with an energy gap varying from 2.93 to 2.63 eV are formed, giving a strong emission with a peak ranging from 540 to 630 nm that is attributed to Se-vacancy defects of the crystallites. The redshift of the emission peak, with respect to the energy gap, is independent of particle size, remaining at around 0.65 eV. The size of the crystallites is estimated to range from 2.8 to 9.5 nm.
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  • 7
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 81 (1997), S. 6351-6356 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The fluorescence properties of Sm3+ and Sm2+ ions incorporated in silicate glasses were measured using steady-state and laser-induced line narrowing techniques and the effect of Al3+ ions to the local structure around the Sm2+ ion was investigated. Sm3+ ion-containing glasses prepared by a sol–gel method were reacted with H2 gas to form the Sm2+ ions. The energies of the three Stark levels of the 5D0→7F1 transition were analyzed using C2v symmetry. The addition of Al3+ ions facilitates dispersion of the Sm2+ ions and increases the coordination number of the Sm2+ ion due to the long distance between the Sm2+ and O2− ions, resulting in the increased fluorescence intensity. The fluorescence intensity of the Sm2+ and Sm3+ ions considerably increases in glasses containing more than 5 mol % Al2O3. © 1997 American Institute of Physics.
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  • 8
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 75 (1999), S. 3072-3075 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Persistent spectral hole burning was observed at room temperature in Eu3+-doped Al2O3–SiO2 glass. The glass was obtained by heating in hydrogen gas to reduce some Eu3+ ions to Eu2+ and the spectral hole was burned in the excitation spectrum of the 7F0→5D0 transition of Eu3+. The depth of the hole burned at 200 K was ∼7% of the total excitation intensity and independent of temperature up to 350 K. A possible mechanism for hole burning is the electron transfer between the Eu3+ ions and the Al-related defect centers. © 1999 American Institute of Physics.
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  • 9
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 73 (1998), S. 3297-3299 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: An electrochemical device for sensing oxygen at low temperature, e.g., 100 °C, was developed by using fast Cu+-conducting ceramics. As the solid electrolyte, a dense glass ceramic consisting of crystalline CuTi2(PO4)3 and Cu3(PO4)2 phases, which three-dimensionally interlock with each other, has been successfully prepared by the controlled crystallization of the glass in the Cu–Ti–P–O system. The electromotive force generated between the electrodes showed a good Nernstian response to the partial pressure of oxygen even at a relatively low temperature such as 100 °C. The mechanism for oxygen sensing was discussed with regard to the fast Cu+ ion conductivity and the redox reaction between Cu+ ion in the dense glass ceramic and oxygen gas. © 1998 American Institute of Physics.
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  • 10
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 3776-3778 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Eu2+ ions were incorporated in SiO2 and Al2O3–SiO2 glasses using a sol-gel process of Si(OC2H5)4, Al(OC4H9sec)3, and EuCl3 6H2O. Glasses incorporated with the Eu2+ ions showed the emission with peak at ∼22000 cm−1 due to 4f 6 5d→4f 7(8S7/2) transition of the Eu2+ ions. 1Al2O3⋅99SiO2 (mol %) glass had an intense emission, 250 times larger than that of 100SiO2 glass. The covalency of the Eu–O bonds is decreased by the Al3+ ions. We concluded that this weak covalency causes the offset of the excited 4f 6 5d level to be small, resulting in an increase in the probability of the radiative relaxation from the 4f 6 5d to 4f 7(8S7/2) level. © 1996 American Institute of Physics.
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