Publikationsdatum:
2014-12-13
Beschreibung:
Atomic- or nanometer-scale surface roughening has been investigated during Si etching in inductively coupled Cl 2 plasmas, as a function of rf bias power or ion incident energy E i , by varying feed gas flow rate, wafer stage temperature, and etching time. The experiments revealed two modes of surface roughening which occur depending on E i : one is the roughening mode at low E i
Print ISSN:
0021-8979
Digitale ISSN:
1089-7550
Thema:
Physik
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