ISSN:
1013-9826
Source:
Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
Notes:
Chemical mechanical polishing (CMP) of copper films in alkaline slurries wasinvestigated. In the copper CMP, the slurry was made by adding colloidal silica abrasive to de-ionizedwater.The organic alkali was added to adjust the pH, H2O2 was used as an oxidizer.The effects ofvarying polishing temperature, polishing pressure, slurry flow rate, organic alkali concentration andoxidizer concentration on removal rate were investigated in order to determine the optimumconditions for those parameters. It is shown the chemical composition of the slurry was 2%~3%oxidizer concentration, 3% organic alkali concentration and proper amount surfactant is reasonable.The solid concentration of the polishing slurry was fixed at 20% by weight. The removal rate ofcopper could reach 700nm/min and the surface roughness after CMP was 0.49nm
Type of Medium:
Electronic Resource
URL:
http://www.tib-hannover.de/fulltexts/2011/0528/01/57/transtech_doi~10.4028%252Fwww.scientific.net%252FKEM.373-374.820.pdf
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