ISSN:
1662-9752
Source:
Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
Notes:
The influence of the chemical mechanical planarization process on the 4o off-axis 4HNSiC removal rate for silicon carbide slurry produced by Cabot Microelectronics Corporation (CMC)has been studied. A detailed kinetic analysis was applied and the linearity of an Arrhenius-likeactivation energy plot suggests that the primary removal occurs from particles adhered to the padsurface
Type of Medium:
Electronic Resource
URL:
http://www.tib-hannover.de/fulltexts/2011/0528/02/20/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.600-603.839.pdf
Permalink