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  • 1
    Publication Date: 2017-02-18
    Description: Synthesis, characterization and density functional theory calculations have been combined to examine the formation of the Zr 3 (Al 1– x Si x )C 2 quaternary MAX phases and the intrinsic defect processes in Zr 3 AlC 2 and Zr 3 SiC 2 . The MAX phase family is extended by demonstrating that Zr 3 (Al 1– x Si x )C 2 , and particularly compositions with x ≈0.1, can be formed leading here to a yield of 59 wt%. It has been found that Zr 3 AlC 2 - and by extension Zr 3 (Al 1– x Si x )C 2 - formation rates benefit from the presence of traces of Si in the reactant mix, presumably through the in situ formation of Zr y Si z phase(s) acting as a nucleation substrate for the MAX phase. To investigate the radiation tolerance of Zr 3 (Al 1– x Si x )C 2 , we have also considered the intrinsic defect properties of the end-members. A -element Frenkel reaction for both Zr 3 AlC 2 (1.71 eV) and Zr 3 SiC 2 (1.41 eV) phases are the lowest energy defect reactions. For comparison we consider the defect processes in Ti 3 AlC 2 and Ti 3 SiC 2 phases. It is concluded that Zr 3 AlC 2 and Ti 3 AlC 2 MAX phases are more radiation tolerant than Zr 3 SiC 2 and Ti 3 SiC 2 , respectively. Their applicability as cladding materials for nuclear fuel is discussed.
    Print ISSN: 0002-7820
    Electronic ISSN: 1551-2916
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Published by Wiley
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  • 2
    Publication Date: 2011-08-19
    Description: Coherent mixing of optical radiation from a tunable continuous-wave dye laser and a stabilized He-Ne laser was used to generate millimeter-wave signals in GaAs FETs attached to printed-circuit millimeter-wave antennas. The generated signal was further down-converted to a 2-GHz IF by an antenna-coupled millimeter-wave local oscillator at 62 GHz. Detailed characterizations of power and S/N under different bias conditions have been performed. This technique is expected to allow signal generation and frequency-response evaluation of millimeter-wave devices at frequencies as high as 100 GHz.
    Keywords: ELECTRONICS AND ELECTRICAL ENGINEERING
    Type: IEEE Transactions on Microwave Theory and Techniques (ISSN 0018-9480); 38; 608-614
    Format: text
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