ISSN:
1089-7623
Source:
AIP Digital Archive
Topics:
Physics
,
Electrical Engineering, Measurement and Control Technology
Notes:
Metalorganic chemical vapor deposition (MOCVD) is an ideal technique for the development of several high-temperature superconducting products. For the development of certain electronic products, reduced thermal budget (product of processing time and temperature) processing is a necessity. Rapid isothermal processing (RIP) based on incoherent light as the source of energy is emerging as a key reduced thermal budget processing technique. Driven by potential applications a RIP-assisted MOCVD system has been designed and fabricated for the deposition of high-temperature superconducting thin films and related materials. Experimental details of the RIP-assisted MOCVD system are described. The results of Y-Ba-Cu-O (YBCO) films deposited on yttrium-stabilized zirconia, SrTiO3, and MgO substrates are also presented. In the case of SrTiO3 substrates, YBCO films were deposited at a substrate temperature of 640 °C. The onset temperature is 91 K and the transition temperature Tc is observed at 89 K. The value of zero-magnetic-field current density Jc at 77 K is 1.5×106 A/cm2. The results presented represent the best values of transition temperature Tc, c-axis orientation, and zero magnetic-field critical current density Jc values for the thermal budget used in the growth of the superconducting thin films by MOCVD.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.1144225
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