ISSN:
1662-9779
Source:
Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
Topics:
Physics
Notes:
Low dielectric constant SiOC(-H) films were deposited on p-type Si (100) substrates byplasma enhanced chemical vapor deposition (PECVD) using methyltriethoxysilane (MTES;C7H18O3Si) and oxygen gas as precursors. The SiOC(-H) films were deposited at room temperatureand then annealed. Nanoindentation studies were carried out in order to determine the mechanicalproperties of the SiOC(-H) films. The elastic modulus and hardness of SiOC(-H) films weremeasured to be in the range of 2.14 – 5.02 and 0.12 – 0.74 GPa, respectively. It was observed thatthe values of elastic modulus and hardness decreases with increase of flow rate ratio of theprecursors. In the SiOC(-H) film, -CH3 group as an end group was introduced into -O-Si-O- chainnetwork, thereby reducing the film density to decrease the values of the mechanical properties
Type of Medium:
Electronic Resource
URL:
http://www.tib-hannover.de/fulltexts/2011/0528/02/23/transtech_doi~10.4028%252Fwww.scientific.net%252FSSP.124-126.239.pdf
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