ISSN:
1572-817X
Source:
Springer Online Journal Archives 1860-2000
Topics:
Electrical Engineering, Measurement and Control Technology
,
Physics
Notes:
Abstract The analysis of the heat spreading in the single-heterostructure GaAs-Ga1-x Al x As laser diode supplied with short current pulses (in the case, however, when the adiabatic approximation is no longer valid) at room temperature is presented in this paper. Relations are derived, describing the time-dependent temperature rise within the volume of the laser diode. The calculations are carried out for a typical SH laser diode. It turns out that in the duration of the short current pulses (t I=200 ns,j=1.5 × 104A cm−2) the increase in junction temperature of the typical SH laser diode amounts to about 6.1 K. This increase leads to an increase of about 9% in the threshold current, to a decrease of about 18% in the laser radiation intensity, and to a shift of the spontaneous radiation band and of the stimulated radiation modes of about 1.9 nm and 0.22 nm, respectively, during each current pulse.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1007/BF00619365
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