ISSN:
1349-9432
Keywords:
ZnCdSe
;
ZnSSe
;
ZnMgSSe
;
ZnSe
;
ZnTe
;
high efficiency
;
green
;
LED
Source:
Springer Online Journal Archives 1860-2000
Topics:
Physics
Notes:
Abstract Green light-emitting diodes (LEDs) were fabricated employing a ZnCdSe/ZnSSe triple quantum-well (TQW) active region surrounded by ZnMgSSe cladding layers grown on an n-type (100) GaAs substrate by molecular beam epitaxy (MBE). A 3.5 mW pure green emission was observed for the surface-emitting LED device at a peak wavelength of 513.3 nm (2.415 eV) with a spectral half-width of 11.7 nm (55 meV) under a 20 mA (4.6 V) direct current at room temperature (25°C). These correspond to an external quantum efficiency of 7.2%, a power conversion efficiency of 3.8%, a luminous current efficiency of 66 lm/A, and a luminous efficiency of 14 lm/W.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1007/s10043-995-0167-y
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