Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
80 (2002), S. 3355-3357
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
The breakdown fields along the 〈112¯0〉 and 〈033¯8〉 directions in 4H–SiC have been measured. For the measurements, epitaxial p+n diodes with mesa structures were fabricated on the (112¯0) and (033¯8) faces, and they showed good rectification properties and avalanche breakdown. The breakdown fields along these directions calculated from the breakdown voltage were found to be about three quarters of that along the 〈0001〉 direction in 4H–SiC. The cause of the anisotropy in breakdown field is discussed. © 2002 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.1477271
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