ALBERT

All Library Books, journals and Electronic Records Telegrafenberg

X
feed icon rss

Your email was sent successfully. Check your inbox.

An error occurred while sending the email. Please try again.

Proceed reservation?

Export
  • 1
    Electronic Resource
    Electronic Resource
    Characteristics of indium-doped GaAs layers grown by liquid phase epitaxy with indium content in the range (0.3–7)×1019 cm−3 (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 3578-3582 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: GaAs layers grown by liquid phase epitaxy and doped with indium in the concentration range of (0.3–7)×1019 cm−3 are studied by etch pit density (EPD), Hall, capacitance-voltage and current-voltage measurement techniques. Layers doped with indium in the range (0.5–5)×1019 cm−3 show about 10%–15% increase in mobility and a corresponding decrease in the background impurity concentrations. In the same range, EPD is found to fall below 102 cm−2. Above 5×1019 cm−3 In doping, mobility decreases drastically, and the dislocation density measured by EPD count goes above 103 cm−2. This result, together with a comparison of free carrier concentrations measured by Hall and capacitance-voltage techniques indicate that dislocation-related scatterings are effective in lowering the mobility for high indium content layers. Reverse current-voltage characteristics of gold Schottky diodes fabricated on the layers do not show any dependence of breakdown voltages on In doping. Simple theoretical calculations give evidence to the fact that the reverse breakdown process in the diodes are, in fact, controlled by the normal avalanching mechanisms dependent on the electrically active background impurities.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.348500
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 2
    Electronic Resource
    Electronic Resource
    Boundary conditions for the heterojunction interfaces of nonparabolic semiconductors (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 4623-4625 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Transmission probability curves are presented for InAs/Al0.4Ga0.6Sb/InAs tunnel diodes which show that for a 2-nm-barrier width, negative differential conductance (NDC) is indicated if the velocity effective mass is used to match the derivatives of the wave functions at the heterojunction interfaces, while the use of the energy-effective mass does not indicate an NDC. It is suggested that an experiment with such a diode may resolve the controversy about the effective mass, to be used for matching the derivatives.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.349100
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 3
    Electronic Resource
    Electronic Resource
    Interface roughness scattering-limited electron mobility in AlAs/GaAs and Ga0.5In0.5P/GaAs wells (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 459-463 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Interface roughness scattering-limited electron mobility is calculated for AlAs/GaAs and Ga0.5In0.5P/GaAs wells taking into account the effects of finite barrier potential, extension of the wave function into the barrier layer, energy band nonparabolicity, and screening of the scattering potential. The mobility in AlAs/GaAs wells varies with the well width L as Ln(n=4.7–4.8), but the variation cannot be fitted to a similar relation for Ga0.5In0.5P/GaAs wells. Experimental results for both the systems may be explained with an asperity height between 2.83 and 5.67 Å, and a correlation length smaller than 170 Å. It is concluded that the larger experimental mobility in Ga0.5In0.5P/GaAs wells is due to the smaller barrier potential in this system. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.370752
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 4
    Electronic Resource
    Electronic Resource
    Empirical formula for the spin-orbit splitting in semiconductors (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 4148-4149 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The spin-orbit splittings in elemental and compound semiconductors are shown to be linearly related with the atomic ionization potential. The relation is used to judge the acceptability of the different reported values of the splitting for various semiconductors. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.359506
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 5
    Electronic Resource
    Electronic Resource
    Band offset in InP/Ga0.47In0.53As heterostructures (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 58 (1991), S. 1056-1058 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Energy levels in InP/Ga0.47In0.53As quantum wells are calculated after reformulating the energy-dependent effective mass to be used for taking into account the energy-band nonparabolicity of both constituents. The required value of the ratio of the conduction-band and valence-band discontinuities is found to be close to 2/3, in agreement with the value found by other methods. The value of the nonparabolicity factor is also found to be the same as that used in earlier transport studies.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.104421
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 6
    Electronic Resource
    Electronic Resource
    Energy levels in finite barrier triangular and arrowhead-shaped quantum wires (1997)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 81 (1997), S. 7885-7889 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Energy eigenvalues and energy shifts are calculated for triangular and arrowhead-shaped GaAs/Ga0.6Al0.4As quantum wires taking into account the finite value of the barrier potential. Calculations were made by using the eigenfunctions of an infinite-barrier right-angled isosceles triangular wire. Calculated values are compared with available experimental results. An equivalence relation is also examined for the estimation of eigenvalues of triangular and arrowhead-shaped quantum wires by knowing the values for rectangular wires. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.365361
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 7
    Electronic Resource
    Electronic Resource
    Electron mobility in In0.5Ga0.5P (1998)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 83 (1998), S. 5862-5864 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The Hall mobility of electrons is calculated for In0.5Ga0.5P by using the experimental values of the effective mass and the band gap, and the estimated values of other constants. The experimental results are explained by taking the alloy scattering potential and the acoustic phonon deformation potential to be 0.435 and 12 eV, respectively. It is concluded that the experimental samples had impurity concentrations lying mostly between 5 and 15 times the electron concentration. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.367446
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 8
    Electronic Resource
    Electronic Resource
    In-plane effective mass in narrow quantum wells of nonparabolic semiconductors (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 62 (1993), S. 2416-2418 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A formula is derived for the in-plane effective mass in narrow quantum wells, taking into account the effects of energy band nonparabolicity. The variation of the mass with the width of the well is studied by using the formula for four systems of wells. The mass is nearly the same as the velocity effective mass of the bulk material of the well in GaAs/Ga0.7Al0.3As wells. It is about 8% larger in InAs/InP wells, but is significantly larger in very narrow wells of Ga0.47In0.53As/InP systems. In the case of InAs/Ga0.58Al0.42Sb wells, the in-plane mass differs from the well mass by large amounts for all well widths of interest.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.109633
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 9
    Electronic Resource
    Electronic Resource
    Alloy scattering-limited mobility in narrow quantum wells (1992)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 60 (1992), S. 2897-2899 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Alloy scattering-limited mobility is calculated for narrow quantum wells of GaAs/Ga0.7Al0.3As, Ga0.47In0.5As/InP, and Al0.48In0.5As/Ga0.47In0.53As systems with widths down to 0.5 nm, taking into account the energy-band nonparabolicity and the effects of wave-function penetration into the barrier layer. Values of mobility are found to be significantly different from those given by the formulas derived earlier for wide wells.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.106812
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 10
    Electronic Resource
    Electronic Resource
    Boundary conditions for tunneling through potential barriers in nonparabolic semiconductors (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 59 (1991), S. 1620-1622 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A wave equation is formulated by using the energy-wave-vector relation for nonparabolic bands and it is shown that the resultant boundary condition is in agreement with the condition of the continuity of probability current density. The condition is shown to involve the velocity effective mass with the derivatives of the wave function, in place of the energy effective mass, used earlier. Calculated results are also presented for the probability of tunneling through a single rectangular barrier in the Ga0.47In0.53As/InP/Ga0.47In0.53As system, which show that the nonparabolicity reduces significantly the value of the probability from those estimated by using the energy effective mass in the boundary condition.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.106249
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
Close ⊗
This website uses cookies and the analysis tool Matomo. More information can be found here...