Publication Date:
2012-10-20
Description:
Author(s): Jacques Levrat, Georg Rossbach, Amélie Dussaigne, Gatien Cosendey, Marlene Glauser, Munise Cobet, Raphaël Butté, Nicolas Grandjean, Henryk Teisseyre, Michał Boćkowski, Izabella Grzegory, and Tadeusz Suski The pronounced optical in-plane anisotropy of a suitably designed nonpolar GaN-based microcavity, mainly inherited from the valence-band complexity of wurtzite semiconductors, allows the coexistence of two different light-matter coupling regimes along orthogonal polarization planes. When increasing ... [Phys. Rev. B 86, 165321] Published Fri Oct 19, 2012
Keywords:
Semiconductors II: surfaces, interfaces, microstructures, and related topics
Print ISSN:
1098-0121
Electronic ISSN:
1095-3795
Topics:
Physics
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