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  • 1
    Electronic Resource
    Electronic Resource
    The fractal structure and the dynamics of aggregation of synthetic melanin in low pH aqueous solutions (1989)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 90 (1989), S. 25-29 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: We have used static and dynamic light scattering to study the dynamics of aggregation of synthetic melanin, an amorphous biopolymeric substance, in low pH aqueous solution. We have found that, depending on the final pH value of the solutions, there existed two regimes of the aggregation kinetics, one corresponding to diffusion limited aggregation (DLA), and the other corresponding to reaction limited aggregation (RLA). The precipitates formed in these two regimes can be characterized by fractal structures. We have found fractal dimensions of df =1.8 for the DLA clusters and df =2.2 for the RLA clusters. These results agree well with the proposed limits of the fractal dimensions of the gold aggregates formed in aqueous solutions by Weitz et al.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.456528
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  • 2
    Electronic Resource
    Electronic Resource
    Evolution of island–pit surface morphologies of InAs epilayers grown on GaAs (001) substrates (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 3700-3705 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report on a study of the morphological evolution of InAs layers grown on GaAs (001) substrates by molecular-beam epitaxy under In-rich conditions. The surface morphology of the InAs layers is characterized by a feature of island–pit combinations. We show that the vertical sizes of the islands and pits can grow simultaneously beyond the average layer thickness, up to several hundred nanometers. The composition of the islands is found to be ternary InxGa1−xAs rather than the expected binary InAs due to intermixing of the layer and substrate materials. We determine that this intermixing is caused by dissociation of the exposed GaAs at the pits, followed by migration of excess Ga atoms and their incorporation into the islands. The density of the island–pit combinations keeps nearly constant for different layer thicknesses. Eventually, as the layer grows beyond a certain thickness, the pits are filled up by the expanding islands, forming a nearly pure island morphology at the growth front. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1354637
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  • 3
    Electronic Resource
    Electronic Resource
    Epitaxial growth of Sb/GaSb structures: An example of V/III-V heteroepitaxy (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 21-27 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The requirements for heteroepitaxial growth of Sb on both GaSb and GaAs, and the subsequent growth of GaSb on Sb, using molecular-beam epitaxy are described. These systems serve as examples of the heteroepitaxy of group-V elements with III-V compounds, i.e., between materials utilizing different bonding and possessing different electronic properties. The quality of the films was determined using high-resolution four-circle x-ray diffraction, and comparisons were made between different structures. GaSb was found to grow (111) oriented on Sb (111) with an inverted stacking sequence. A simple epitaxial model is proposed to explain this. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.359373
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  • 4
    Electronic Resource
    Electronic Resource
    Interface properties of (In,Ga)Sb/InAs heterostructures (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 8379-8383 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The interfaces between (In,Ga)Sb and InAs(100) grown by molecular-beam epitaxy have been investigated by x-ray diffraction, x-ray photoelectron spectroscopy (XPS), and Auger electron spectroscopy. The InAs on (In,Ga)Sb interface has been found to be significantly broader than the reverse one and the asymmetry is the result of mixing between arsenic and antimony. The studies of the growth surfaces have shown a persistent presence of antimony on an InAs surface suggesting a lower, antimony-rich, surface free energy. This energy imbalance indicates a driving mechanism behind the mixing of the group-V elements as the growth of InAs on (Ga, In)Sb is commenced. The band offset of the InAs on (Ga,In)Sb has been determined by XPS. The In 4d and Ga 3d to valence-band maximum binding energy differences for bulk InAs and GaSb were obtained by fitting the experimental valence-band density of states (VBDOS) to the experimentally broadened, theoretical VBDOS. The core-level separation between In 4d and Ga 3d peaks from the InAs/GaSb structure was determined by fitting Gaussian–Lorentzian functions to the peaks. The band offset was determined to be 0.62±0.1 eV. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.362557
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  • 5
    Electronic Resource
    Electronic Resource
    X-ray studies of defects and thermal vibrations in an organometallic vapor phase epitaxy grown GaN thin film (1997)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 82 (1997), S. 2308-2311 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A semiconducting GaN thin film with the 001 plane parallel to the surface grown by organometallic vapor phase epitaxy method on (110) sapphire was studied using x-ray diffraction. The line profiles of the GaN thin film along the [001] direction can be quantitatively reproduced assuming a strained lattice at the interface. The deformation and growth faults were determined to be equal and each is 0.2%. Least-squares refinement on 42 independent peaks, after correcting for the first-order thermal diffuse scattering, gives the values of the Debye–Waller factor for Ga (B11=0.28, B33=0.26) and N (B11=0.38, B33=0.26) atoms. The wurtzite positional parameter u for this GaN thin film was found to be 0.3730, 1% smaller than that in a strain-free single crystal (u=0.377), most probably resulting from the strain effects. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.366038
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  • 6
    Electronic Resource
    Electronic Resource
    Sb/GaSb heterostructures and multilayers (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 63 (1993), S. 1098-1100 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have successfully synthesized heterojunctions and elementary multilayered structures of the semimetal-semiconductor system Sb/GaSb using molecular beam and migration enhanced epitaxies. The study is motivated in part by the potential for producing an indirect narrow-gap semiconductor, in which a confinement-induced positive energy gap in the Sb layers will lead to highly attractive properties for nonlinear optical switches operating in the infrared. One may also be able to exploit the long mean free path in Sb (up to 2 μm) in studying quantum transport phenomena. X-ray diffraction confirms the ordered growth of GaSb/Sb/GaSb multilayers, and field-dependent magnetotransport measurements yield electron and hole mobilities ≥3×104 cm2/V s in Sb thin films.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.109792
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  • 7
    Electronic Resource
    Electronic Resource
    Epitaxial integration of single crystal C60 (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 63 (1993), S. 3443-3445 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Single crystal thin films of (111) oriented C60 are grown on epitaxial layers of single crystal antimony. The C60/Sb epitaxy is confirmed by low-energy electron diffraction which indicates that the [11¯0] in-plane directions are parallel in the two layers. X-ray diffraction shows that the C60 film is entirely (111) oriented and of high quality with sharp Bragg peaks and narrow mosaic spread. In this study the Sb films were grown on GaSb, to which they are lattice matched; however, since Sb can be epitaxially grown on surfaces with a large lattice mismatch this technique may be applied to integrate C60 single crystals onto many substrates or devices with a surface having sixfold symmetry.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.110114
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  • 8
    Electronic Resource
    Electronic Resource
    Growth of large, defect-free pure C60 single crystals (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 59 (1991), S. 3402-3403 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Millimeter-sized single crystals of C60 were grown by sublimation of C60 powder in a vacuum for 6–24 h. The crystals had excellent facets, were free of C70 or solvent, and showed face-centered cubic symmetry with a very small mosaic spread down to 0.01°.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.105688
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  • 9
    Electronic Resource
    Electronic Resource
    Metastable surface ordering in strain relaxed Si0.5Ge0.5 epitaxial layers grown at high temperature (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 74 (1999), S. 531-533 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have studied compositional ordering in the near surface region of 3500 Å thick unstrained Si0.5Ge0.5(001) samples grown by chemical vapor deposition. Measuring asymptotic Bragg scattering along integer and half-integer truncation rods, we found a type of metastable ordering at this surface which is characterized by integer/half-integer reflections along the integer order truncation rods. We show unambiguously that those scattering features originate from a thin layer at the surface. Annealing at 750 °C extinguished these reflections irreversibly, while the reflections of the RS3 bulk structure were not affected. Anomalous scattering at the Ge K edge also confirmed the existence of a new structure in the near surface region. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.123177
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  • 10
    Electronic Resource
    Electronic Resource
    X-ray analysis of spontaneous lateral modulation in (InAs)n/(AlAs)m short-period superlattices (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 78 (2001), S. 219-221 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The lateral composition modulation in (InAs)n/(AlAs)m short-period superlattices was studied by means of synchrotron x-ray diffraction. By choosing specific diffraction vectors having a large component closely parallel to the modulation direction, we are able to observe a number of lateral satellite peaks around the zero-order short-period superlattice peak. A model, incorporating both composition and strain, is used to simulate the intensities of these satellites. Our results provide a quantitative fit and permit the evaluation of the composition amplitude. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1338499
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