ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Tl2Ba2Ca1Cu2Ox thin films with excellent alignment have been grown on CeO2 buffered R-plane sapphire using an ex situ anneal step in argon atmospheres at temperatures of 720–740 °C. With this low-temperature process we have overcome the serious problem of reaction layers being formed at the CeO2/Tl2Ba2Ca1Cu2Ox interface, which can degrade film properties. The presence of a sharp CeO2/Tl2Ba2Ca1Cu2Ox interface has been confirmed by x-ray diffraction, transmission electron microscopy, and high resolution electron microscopy observations. Films have well connected morphologies, with critical temperature (Tc) values of up to 101.6 K and critical current density (Jc) values of up to 1.25×105 A cm−2. © 1996 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.118093
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