Electronic Resource
[S.l.]
:
American Institute of Physics (AIP)
Journal of Applied Physics
62 (1987), S. 1713-1716
ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
The dislocation structure in InGaAs/GaAs strained-layer superlattices has been characterized by transmission electron microscopy. It is shown that most of the dislocations are confined to the buffer/strained-layer superlattice interface. We have also found that the strained-layer interface can be an effective barrier to dislocation propagation. Extended dislocations, which are potentially electrically active defects, are shown to exist in the strained-layer superlattice.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.339598
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