Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
53 (1988), S. 304-306
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
A systematic study compares the quality of InP epitaxial layers grown by low-pressure organometallic vapor phase epitaxy (OMVPE) using triethylindium, phosphine, and tertiarybutylphosphine (TBP) sources. High quality InP layers are obtained with either phosphorus source for growth at a high V/III ratio. The full widths at half-maximum (FWHM) of the main 4 K photoluminescence peak from InP layers grown with phosphine and TBP sources are 1.1 and 1.3 meV, respectively. This 1.3 meV FWHM is the narrowest reported for InP grown by OMVPE with a nonhydride phosphorus source. High quality InP layers can be grown at a lower V/III ratio with the TBP source than with the phosphine source.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.99903
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