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  • 1
    Publication Date: 2022-05-26
    Description: © Macmillan Publishers, 2013. This article is distributed under the terms of the Creative Commons Attribution License. The definitive version was published in Oncogene 32 (2013): 1135–1143, doi:10.1038/onc.2012.135.
    Description: Neurofibromatosis type 2 patients develop schwannomas, meningiomas and ependymomas resulting from mutations in the tumor suppressor gene, NF2, encoding a membrane-cytoskeleton adapter protein called merlin. Merlin regulates contact inhibition of growth and controls the availability of growth factor receptors at the cell surface. We tested if microtubule-based vesicular trafficking might be a mechanism by which merlin acts. We found that schwannoma cells, containing merlin mutations and constitutive activation of the Rho/Rac family of GTPases, had decreased intracellular vesicular trafficking relative to normal human Schwann cells. In Nf2−/− mouse Schwann (SC4) cells, re-expression of merlin as well as inhibition of Rac or its effector kinases, MLK and p38SAPK, each increased the velocity of Rab6 positive exocytic vesicles. Conversely, an activated Rac mutant decreased Rab6 vesicle velocity. Vesicle motility assays in isolated squid axoplasm further demonstrated that both mutant merlin and active Rac specifically reduce anterograde microtubule-based transport of vesicles dependent upon the activity of p38SAPK kinase. Taken together, our data suggest loss of merlin results in the Rac-dependent decrease of anterograde trafficking of exocytic vesicles, representing a possible mechanism controlling the concentration of growth factor receptors at the cell surface.
    Description: This work was supported by NIH R01 CA118032 (to NR), and MBL research fellowships (to NR and GM), NIH R01 NS23868 (to STB).
    Keywords: Merlin ; NF2 ; Rac ; Trafficking ; Exocytosis
    Repository Name: Woods Hole Open Access Server
    Type: Article
    Format: application/pdf
    Format: application/msword
    Format: video/quicktime
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  • 2
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 81 (1997), S. 2904-2906 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effects of (NH4)2Sx treatments on the interface traps in Au/n-GaAs and Au/n-In0.5Ga0.5P Schottky contacts are investigated by deep level transient spectroscopy measurements. The interface trap concentration in Au/GaAs increases when the residual S overlayer is sublimated after (NH4)2Sx treatments. But the trap concentration decreases when the S overlayer is rinsed by de-ionized water. In Au/InGaP, the phosphorus vacancy-related interface traps are passivated effectively by the (NH4)2Sx treatment. These results are attributed to the fact that S bonds with As but not with P. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 72 (1998), S. 1196-1198 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The temperature dependence of the spatial resolution of capacitance-voltage (C−V) profiles in the compositional quantum well (CQW) is investigated. The apparent carrier distribution (ACD) peak in the In0.2Ga0.8As/GaAs single QW is observed to show a strong temperature dependence, compared to that in Si δ-doped GaAs. The ACD peak in CQW is wider (narrower) than the spatial extent of ground-state wave function at high (low) temperatures. The self-consistent numerical simulations on the carrier distribution show that the full width at half maximum of ACD peak in CQW is mainly affected by the debye averaging process at high temperatures and the change in the position expectation value of the two-dimensional electrons at low temperatures. This change in the position expectation value is found to be much smaller than the spatial extent of ground-state electron wave function. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 84 (1998), S. 2673-2683 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effect of multiple quantum well (MQW) parameters on the free carrier distribution (FCD) and the apparent carrier distribution (ACD) obtained from capacitance–voltage (C–V) profiling has been investigated using a self-consistent simulation technique and the C–V profiling technique. The FCD in MQW structures reveals large outer peaks and small inner peaks even when all the parameters of each quantum wells (QWs) are the same. Such a feature becomes more apparent as the barrier layer becomes thinner or the barrier doping level becomes lower. These characteristics are found to originate from the fact that the density of carriers confined in each well is mostly determined by the depletion region formed alongside the well via the charge neutrality condition. The ACD is found to vary drastically as the thickness or the doping level of barrier changes. When the Debye averaging process is prominent, the ACD peaks are broader and smaller than the FCD peaks and are displaced toward the bottom layer side. The ACD inner peaks even disappear completely when the Debye screening length is comparable to or larger than the QW period, while real free carriers are well confined in each well. The effect of temperature on the ACD through the Debye averaging process is also investigated. When the Debye length is much smaller than the QW period, the full width at half maximum of the ACD is determined by the change of the position expectation value of the two-dimensional differential carriers. This change of position expectation value is found to be much smaller than the well width for relatively narrow QWs. The accuracy of our simulation results is confirmed by the excellent agreements between the simulated ACDs and the measured ACDs of In0.2Ga0.8As/GaAs MQWs. As an example of extracting the qualitative informations from the measured C–V profile, the C–V profiles of partially strain relaxed InxGa1−xAs/GaAs MQWs with x=0.15 and x=0.25, grown by metal organic chemical vapor deposition, are discussed. These results show systematically how the QW parameters affect the FCD and the ACD. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 70 (1997), S. 3284-3286 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Electronic properties of partially relaxed InxGa1−xAs/GaAs multiple quantum well (MQW) structures are investigated using capacitance–voltage (C–V) profiling and deep level transient spectroscopy (DLTS). As the In composition becomes large, the depletion of carriers confined in QWs and the concentration of dislocation-related deep traps are increased. The carrier depletion is observed to occur predominantly in the QWs adjacent to the bottom layer. This depletion is believed to be due to electron capture at the acceptor-like misfit dislocation-related traps. Our results thus show that the C–V and DLTS measurements, combined with the numerical simulation of C–V profiles, can be used to study the influence of nonuniformly distributed misfit dislocations on the carrier distribution in MQW structures. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 74 (1999), S. 2987-2989 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effects of quantum well (QW) parameters on the apparent carrier distribution (ACD) are investigated using a self-consistent simulation and the capacitance–voltage (C–V) profiling techniques. The simulation results show that the change of position expectation value of two-dimensional electrons (Δx¯2D) completely determines the full width at half maximum (FWHM) of 100 K ACD peak of In0.23Ga0.77As/GaAs single QW for the well width tw≥125 Å. The value of Δx¯2D is insensitive to the variation of conduction band offset ΔEc for ΔEc≥120 meV. The influence of the Debye averaging effects on the ACDs increases as the values of tw and ΔEc are decreased. In multi-QW structure, the Debye averaging effects influence the FWHM of ACD peaks mostly in the first QW. Extraction of QW parameters directly from the measured C–V profile is finally discussed. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 7
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 70 (1997), S. 2987-2989 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Carrier profiles of multiple quantum wells are studied using self-consistent simulations. The free carrier density of the well is found to be distributed nonuniformly and symmetrically, although the doping level in barriers is uniform. The calculated apparent carrier density obtainable from the capacitance-voltage profile is found to be distributed asymmetrically. Simulation results show that, even if electrons are confined in quantum wells, the apparent electron distribution can be flattened if barrier thickness or doping level in barriers are reduced to such an extent that the Debye length is comparable to the barrier thickness. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 8
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 72 (1998), S. 3491-3493 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effects of partial dopant ionization on the capacitance–voltage (C–V) characteristics of δ-doped structures have been investigated using self-consistent simulations. The simulation results show that partially ionized δ-doped dopants should produce a much sharper C–V profile compared with the case of fully ionized dopants. The results reveal also that the main factor which determines the spatial resolution and the full width at half maximum of the C–V peak is the spatial extent of the dopant profile rather than the spatial extent of the ground-state wave function. From this, it is suggested that the δ-doped C–V data should be interpreted always with the effect of partial ionization of δ-doped dopants. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 9
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 84 (1998), S. 4428-4435 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Epitaxial Bi4Ti3O12 (BTO) thin films were deposited on MgO(001) substrates using Pt layers as top and bottom electrodes. In spite of the apparently symmetric capacitor structure, polarization–voltage measurements revealed strong imprint failures and current–voltage measurements showed rectifying behaviors. Imprint pulse tests with a 5 V dc bias and post-annealing treatments suggested that the asymmetric behaviors should be due to interfacial states induced by thermal processes. To probe the interfacial states, capacitance–voltage (C–V) measurements were performed. By fitting the C–V data with a model which describes the Pt/BTO/Pt structure as a series circuit composed of three capacitors, built-in voltages at the top and the bottom interfaces could be determined. Difference in the built-in voltages could explain the imprint failures and the rectifying behaviors. The interfacial states in the BTO capacitors were controlled by varying electrode materials. © 1998 American Institute of Physics.
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  • 10
    Electronic Resource
    Electronic Resource
    Oxford, UK : Blackwell Publishing Ltd
    Sedimentology 20 (1973), S. 0 
    ISSN: 1365-3091
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Geosciences
    Notes: The high voltage electron microscope allows the internal structure of fine quartz sediment particles to be examined. With high accelerating voltages sufficient penetration is obtained for actual particles to be directly examined in the transmission mode. Dislocations have been observed and also various substructures—indicated by Moire patterns—some of which may be due to Dauphine twinning. Some areas of great distortion have been observed at particle edges, but a certain degree of crystallinity appears to be retained.
    Type of Medium: Electronic Resource
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