ISSN:
1063-7826
Source:
Springer Online Journal Archives 1860-2000
Topics:
Electrical Engineering, Measurement and Control Technology
,
Physics
Notes:
Abstract A previously proposed method for determining the parameters of electron-hole scattering in indirect-gap semiconductors is used to investigate the properties of p-type silicon. Diode n +-p-p + structures were used for the measurements. The results obtained by us indicate that complete dragging of the minority electrons by the majority holes is possible, even at room temperature, in p-type material with doping levels N〉1018 cm−3.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1134/1.1187072
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