Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
72 (1998), S. 1101-1103
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
The activation of a Mg acceptor in GaN, by means of annealing under minority-carrier injection, is observed at a temperature above 300 °C. This activation is carried on with hydrogen left in the layer. The p-type GaN layers activated by this treatment are repassivated by additional annealing in an open-circuit configuration even in inert gas, and then reactivated by annealing under minority-carrier injection. Hydrogen remaining in the layer seems to play a major role in this reversible phenomenon. © 1998 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.120936
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