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  • 1
    Electronic Resource
    Electronic Resource
    Formation of iron or chromium doped epitaxial sapphire thin films on sapphire substrates (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 5412-5421 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: This work summarizes results of a simple procedure to incorporate dopants into the near surface region of single-crystal sapphire. We demonstrate the formation of iron-doped and chromium-doped sapphire thin films by solid-phase epitaxial growth. Amorphous alumina films of about 200–350 nm thickness were deposited onto single-crystal sapphire substrates. Fe or Cr ions were introduced into the films during deposition. A post-deposition thermal process was performed in oxidizing ambients at 800–1400 °C to induce epitaxial growth and to incorporate dopants. The epitaxial relationship of the grown film with the substrate was confirmed by both ion channeling and cross-sectional transmission electron microscopy. The growth kinetics were determined by time-resolved reflectivity measurements for different dopant concentrations. Ion channeling angular scans revealed that the Fe or Cr ions are incorporated onto octahedral sites (Al3+ sites) in the corundum structure as expected in equilibrium. External optical transmittance measurements exhibited absorption in the near ultraviolet range associated with the Fe3+ state. The substitution of Cr for Al3+ was also confirmed by the observation of R1 and R2 luminescence lines characteristic of ruby. The doping procedure has potential applications in the fabrication of thin film planar optical waveguides and thin film stress sensors. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.359722
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  • 2
    Electronic Resource
    Electronic Resource
    Photoluminescence spectra of trivalent praseodymium implanted in semi-insulating GaAs (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 2347-2353 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The photoluminescence spectrum of trivalent praseodymium, obtained by implantation and annealing of semi-insulating GaAs, is reported. The photoluminescence spectrum, observed at 2, 10, 20, and 40 K, extends from 9716 to 4000 cm−1. Sharp lines are observed in groups centered at 9500, 7400, 6200, 5200, and 4500 cm−1. Nineteen 3HJ energy levels are identified from these data. Only one Pr3+ site is observed. These energy levels were fitted by a D4 crystal-field model with a rms deviation of 64 cm−1. The zero phonon line at 4687.7 cm−1 is strongly coupled to the 62 and 79 cm−1 lattice phonons. All other groups show either a very weak coupling (6200 cm−1) or none to the lattice phonons.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.354720
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  • 3
    Electronic Resource
    Electronic Resource
    Observations of plasma dynamics in the vacuum spark (1995)
    [S.l.] : American Institute of Physics (AIP)
    Physics of Plasmas 2 (1995), S. 3910-3916 
    Details
    ISSN: 1089-7674
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Experimental observations are presented of a vacuum spark driven by a low impedance pulse forming line delivering 100 kA to the load. A pulsed laser is used to form a preionizing plasma on the cathode. The combination of axial and radial optical streak camera observations, together with the time and space resolved soft x-ray emission, permit the evolution of the plasma dynamics, density and temperature to be measured. Three kinds of behavior are observed according to axial position. A close correlation is found between the x-ray and the optical emission, with the observation of micropinch formation. A discussion is presented in which the behavior of the vacuum spark under differing operating conditions is compared. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.871020
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  • 4
    Electronic Resource
    Electronic Resource
    Annealing behavior of implanted helium in indium phosphide (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 78 (2001), S. 207-209 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The thermal stability of 3He implanted into single crystal indium phosphide has been studied as a function of postimplant annealing temperature between 150 and 600 °C and annealing temperature ramp rate in the range 0.1–20 ° C/s. Retention of implanted helium (implant energy 1.0 MeV and fluence 1.0×1016 cm−2) is measured via the 3He(d,p)4He nuclear reaction. Helium is shown to be a facile diffuser unless trapped by implantation induced defects. The temperature ramp rate is shown to be a dominant parameter in determining the fraction of implanted helium that becomes trapped in voids. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1337643
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  • 5
    Electronic Resource
    Electronic Resource
    Nonlinear optical response of As+-ion implanted GaAs studied using time resolved reflectivity (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 68 (1996), S. 3287-3289 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The transient reflectivity response of GaAs with a 2% excess As concentration (GaAs:As), prepared by As+ ion implantation, has been measured at photon energies near the band gap. Results are compared with similar measurements on implanted GaAs with a 0.01% excess As concentration, and unimplanted GaAs. For GaAs:As, the transient refractive index change Δn, is larger than, but of the opposite sign to that of unimplanted GaAs. The measured carrier lifetime of 1±0.1 ps is identical to that of low-temperature GaAs. The wavelength dependence of Δn indicates the presence of an induced absorption peak at photon energies near the band gap, which is attributed to band-gap renormalization. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.116576
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  • 6
    Electronic Resource
    Electronic Resource
    Doping effects on the kinetics of solid-phase epitaxial growth of amorphous alumina thin films on sapphire (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 924-926 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effects of doping on the kinetics of solid-phase epitaxial growth of amorphous alumina have been studied. Amorphous alumina Al2O3) thin films, 200–265 mm thick, were deposited on to (0001) sapphire substrates by electron-beam evaporation. Iron or chromium atoms were uniformly doped into the films during deposition to cation concentrations below 5 cationic %. The kinetics of the epitaxial growth were studied at 800–1050 °C in flowing oxygen gas by in situ time-resolved reflectivity techniques as well as by ion backscattering and channeling techniques. A phase transformation sequence from amorphous through gamma to alpha alumina has been observed in all the undoped and doped films. The transformation from γ to α alumina is a thermally activated process with an activation energy of 5.0±0.2 eV, independent of the presence of dopants. However, the presence of dopants affects the overall transformation rate. Fe enhances while Cr slows the growth rate relative to the undoped case. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.114696
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  • 7
    Electronic Resource
    Electronic Resource
    Modification of the second-order optical susceptibility in AlxGa1−xAs by ion-beam induced amorphization (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 65 (1994), S. 216-218 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The optical second-harmonic (SH) response of GaAs and Al0.6Ga0.4As bombarded with 1.2-MeV energy As+ ions has been measured for doses ranging from 5×1012 to 2×1014 ions cm−2. The measured SH response vanishes at an ion dose of 2×1014 ions cm−2 as a result of ion induced amorphization. Thermal annealing at 600 °C greatly reduced the damage induced optical absorption, for λ=1.06 μm light, but had no effect on the SH susceptibility.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.112677
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  • 8
    Electronic Resource
    Electronic Resource
    Levitt, Ian: Joseph Livesey of Preston: Business, Temperance and Moral Reform : Preston, University of Central Lancashire, 1996 (1998)
    Cambridge : Cambridge University Press
    Urban history 25 (1998), S. 131-132 
    Details
    ISSN: 0963-9268
    Source: Cambridge Journals Digital Archives
    Topics: Architecture, Civil Engineering, Surveying , History , Sociology
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1017/S0963926800012815
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  • 9
    Electronic Resource
    Electronic Resource
    The meaning and management of yield in hotels (1995)
    Bingley : Emerald
    International journal of contemporary hospitality management 7 (1995), S. 23-26 
    Details
    ISSN: 0959-6119
    Source: Emerald Fulltext Archive Database 1994-2005
    Topics: Economics
    Notes: Definitions of yield management vary in terms of their content andfocus. Develops a "best fit" definition of yield managementof the hotel sector by reviewing the literature in this area andextracting the key words and central meanings used. In addition,produces a list of eight features using a comparison and analysis of theviews of London-based front office managers and features of yieldmanagement applications promoted through vendors' sales literature.Together these eight features illustrate what an ideal yield managementapplication would offer. While all of the applications currently forsale within the UK offer some of these features, none of them arecapable of performing the complete range.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1108/09596119510083229
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  • 10
    Electronic Resource
    Electronic Resource
    The application of citational and co-citational analysis to the property discipline (1995)
    Bradford, West Yorkshire [u.a.] : Emerald
    Journal of property valuation & investment 13 (1995), S. 11-24 
    Details
    ISSN: 0960-2712
    Source: Emerald Fulltext Archive Database 1994-2005
    Topics: Economics
    Notes: The property industry has undergone significant change since theearly 1980s. These changes include growing demands forprofessionalization and the recognition of the utility of property as analternative form of investment. Examines the use of citational andco-citational analysis to investigate the development of the propertydiscipline and to detect these types of changes within the literature.Both citational and co-citational analysis examine the way in whichauthors reference publications to build a greater understanding of thebody of knowledge which underwrites a discipline. Identifies seminalworks and eminent authors, and four areas of specialization within theproperty discipline. These are income valuation methods, leaseholdvaluation, property investment and the use of expert systems inresidential valuation. Concludes that citational and co-citationalanalysis provide useful techniques to explore and document thedevelopment of the property literature. Provides a preliminaryinvestigation and a base for future research.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1108/14635789510099418
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