Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
77 (2000), S. 3233-3235
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
The density of threading dislocations (TD) in GaN grown directly on flat sapphire substrates is typically greater than 109/cm2. The density of dislocations can be decreased by orders of magnitude using cantilever epitaxy, which employs pre-patterned sapphire substrates to provide reduced-dimension mesa regions for nucleation and etched trenches between them for suspended lateral growth of GaN or AlGaN. The substrate is pre-patterned with narrow lines and etched to a depth that permits coalescence of laterally growing III–N nucleated on the mesa surfaces before vertical growth fills the etched trench. Low-dislocation densities typical of epitaxial lateral overgrowth are obtained in the cantilever regions and the TD density is also reduced up to 1 μm from the edge of the support regions. © 2000 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.1325394
Permalink
|
Location |
Call Number |
Expected |
Availability |