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  • 1
    Electronic Resource
    Electronic Resource
    Laser ablation deposition of metal oxides/nitrides films at room temperature (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 3438-3441 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report on the role of laser ablated plume size for deposition of aluminum films in oxygen and nitrogen ambient atmosphere. The films were deposited at room temperature and were characterized using x-ray diffraction, scanning electron microscopy, and micro-Raman. The formation of aluminum nitride is attributed to breakdown of nitrogen gas due to high shock temperature and subsequent mixing with aluminum plasma in the shocked region. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.371226
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  • 2
    Electronic Resource
    Electronic Resource
    Domain state model for exchange bias (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 7269-7271 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Monte Carlo simulations of a system consisting of a ferromagnetic layer exchange coupled to a diluted antiferromagnetic layer described by a classical spin model show a strong dependence of the exchange bias on the degree of dilution in agreement with recent experimental observations on Co/CoO bilayers. These simulations reveal that diluting the antiferromagnet leads to the formation of domains in the volume of the antiferromagnet carrying a remanent surplus magnetization which causes and controls exchange bias. To further support this domain state model for exchange bias we study, in the present article, the dependence of the bias field on the thickness of the antiferromagnetic layer. It is shown that the bias field strongly increases with increasing film thickness and eventually goes over a maximum before it levels out for large thicknesses. These findings are in full agreement with experiments. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1358829
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  • 3
    Electronic Resource
    Electronic Resource
    Investigation of the cut location in hydrogen implantation induced silicon surface layer exfoliation (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 5980-5990 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The physical mechanisms of hydrogen induced silicon surface layer exfoliation were investigated using the combination of ion beam analysis, secondary ion mass spectroscopy (SIMS), scanning electron microscopy (SEM), and cross section transmission electron microscopy (XTEM). A 〈100〉 oriented silicon wafer was implanted with 175 keV protons to a dose of 5×1016 cm−2. The implanted wafer was bonded to a silicon oxide capped 〈100〉 silicon wafer and then heated to an elevated temperature of 600 °C to produce exfoliation. The hydrogen-implanted sample was analyzed in the as-implanted state as well as after the cleavage of the silicon wafer. The depth distribution of the implantation damage was monitored by Rutherford backscattering spectrometry (RBS) in channeling condition and XTEM imaging. Elastic recoil detection analysis and SIMS was performed to examine the hydrogen depth distribution. Cross section SEM and RBS channeling was used to measure the thickness of the exfoliated layer after cleavage. A comparison of the results deduced from the methods listed shows conclusively that the cleavage of the silicon wafer takes place above the hydrogen concentration peak near the implantation damage peak, revealing the crucial role of the implantation damage in the crystal in terms of hydrogen induced cleavage of the silicon crystal. The stress and strain field in the proton-implantation induced damage region of the silicon crystal is proposed to explain the observed results. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1353561
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  • 4
    Electronic Resource
    Electronic Resource
    Streaming instability in the grain charge fluctuations (1996)
    [S.l.] : American Institute of Physics (AIP)
    Physics of Plasmas 3 (1996), S. 457-460 
    Details
    ISSN: 1089-7674
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Highly charged massive dust grains present in a dusty plasma may exhibit charge fluctuations in response to certain types of oscillations incorporated in the plasma. In this situation the grain charge becomes a time-dependent and self-consistent dynamic variable. The consequent modifications in the collective properties of a dusty plasma in response to longitudinal space-charge waves are investigated. It is shown this new effect gives rise to purely damped modes, in addition to causing a collisionless damping of the normal modes. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.871897
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  • 5
    Electronic Resource
    Electronic Resource
    Relating Green's functions in axial and Lorentz gauges using finite field-dependent BRS transformations (2000)
    College Park, Md. : American Institute of Physics (AIP)
    Journal of Mathematical Physics 41 (2000), S. 1755-1767 
    Details
    ISSN: 1089-7658
    Source: AIP Digital Archive
    Topics: Mathematics , Physics
    Notes: We use finite field-dependent BRS transformations (FFBRS) to connect the Green functions in a set of two otherwise unrelated gauge choices. We choose the Lorentz and the axial gauges as examples. We show how the Green functions in axial gauge can be written as a series in terms of those in Lorentz gauges. Our method also applies to operator Green's functions. We show that this process involves another set of related FFBRS transformations that is derivable from infinitesimal FFBRS. We suggest possible applications. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.533209
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  • 6
    Electronic Resource
    Electronic Resource
    .pi.-Cation radicals of copper(II) derivatives of short chain basket handle porphyrins (1994)
    s.l. : American Chemical Society
    Inorganic chemistry 33 (1994), S. 392-394 
    Details
    ISSN: 1520-510X
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/ic00080a032
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  • 7
    Electronic Resource
    Electronic Resource
    Effects of ion irradiation on the residual stresses in Cr thin films (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 73 (1998), S. 891-893 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Cr films sputtered onto {100} Si substrates at room temperature were found to be under residual tension, as revealed by wafer curvature measurements. A 150 nm thick Cr film was bombarded with 300 keV Ar ions after deposition. The intrinsic residual tensile stress increased slightly and then decreased with further increase in the ion dose. For ion doses 〉1×1015 ions/cm2, the stress in the film became compressive and increased with increasing dose. Transmission electron microscopy revealed that the grain boundaries in as-deposited Cr have columnar porosity. A Cr film, ion irradiated to a dose of 5×1015 ions/cm2, showed no grain boundary porosity. The changes in the residual stress during ion irradiation are explained by considering Ar incorporation in the film and the manner in which irradiation may change the interatomic distances and forces. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.122029
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  • 8
    Electronic Resource
    Electronic Resource
    Diagnostics of laser ablated plasmas using fast photography (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 74 (1999), S. 929-931 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report on dynamics of the laser ablated plumes in an ambient atmosphere using fast photography. The expanding plasma is studied at different delay times with respect to the ablating pulse. Dependence of plasma parameters such as velocity, temperature, density, and pressure on time and ambient atmosphere is presented. The images of the expanding plume are used to estimate the size of the particles in the plume. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.123412
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  • 9
    Electronic Resource
    Electronic Resource
    Limits of residual stress in Cr films sputter deposited on biased substrates (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 75 (1999), S. 3123-3125 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Stress evolution in thin Cr films on Si substrates is studied as a function of substrate bias. With increasing bias voltage, the tensile stress is observed to increase to a maximum, transition to compressive stress that also reaches a maximum. We relate the tensile stress maximum to the maximum in attractive interatomic forces between the coalescing islands, and the compressive stress maximum to the saturation in Frenkel defect concentration, with smaller contribution from entrapped Ar. We show that the maxima in both tensile and compressive residual stress correspond to the film yield strength. Compressive yield strength is higher as compared to tensile due to hardening from point defects. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.125251
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  • 10
    Electronic Resource
    Electronic Resource
    Electrical resistivity of sputtered Cu/Cr multilayered thin films (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 85 (1999), S. 302-309 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Parallel (in-plane) electrical resistivities of single-layered Cu and Cr films, and Cu/Cr multilayered thin films sputter deposited on Si substrates were evaluated as a function of layer thicknesses ranging from 2.5 to 150 nm in the temperature range of 4–325 K. The resistivity of the multilayers at a given temperature increased and residual resistivity ratio decreased with decreasing layer thicknesses. At 300 K, the resistivity of a 1 μm thick Cu film was approximately equal to the bulk value, but the resistivity of the Cr film was an order of magnitude higher than that of bulk Cr. The microstructures of the multilayers and the single-layered Cu and Cr thin films were characterized by transmission electron microscopy. For layer thicknesses ranging from 2.5 to 150 nm, the multilayers exhibited sharp, planar interfaces between the two phases. The individual Cu and Cr layers were nanocrystalline with near-equiaxed grains in Cu and columnar grains in Cr. The dependence of electrical resistivity on the layer thickness of multilayers is explained using a model that accounts for interface scattering and thin-film resistivities of polycrystalline Cu and Cr. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.369446
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