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  • 1
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 87 (2000), S. 110-116 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We evaluated the deuterium diffusion coefficient in hexagonal boron nitride (h-BN) thin films deposited by radio frequency magnetron sputtering on metallic substrate. The measurements were carried out by studying the transient of the deuterium permeation flux through substrates coated with h-BN thin films 400 nm thick, for temperatures ranging from 535 to 752 K. The deuterium diffusion coefficient was in the range between 1.4×10−13 and 5.3×10−12 cm2/s and was characterized by an activation energy of 0.52±0.04 eV and pre-exponential factor of the order of 10−8 cm2/s. In steady-state transport conditions the deuterium concentration in the h-BN layers was close to 3×1021 at./cm3. Starting from the earlier data we suggest a model in which the deuterium migration process is controlled by diffusion of D atoms in the volume fraction of the h-BN films relative to grain boundaries, just in connection with the structure of the deposited samples which consists of nanocrystals with 2 nm average diameter. © 2000 American Institute of Physics.
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  • 2
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 2702-2711 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Ion-beam mixing of Fe-Al and Mo-Cr multilayers was studied by alternately sputtering with 5 keV Ar+ and then analyzing with Auger electron spectroscopy. The target temperature was variously room temperature, 450, 525, or 600 K. The two systems were chosen on the basis of having heats of mixing (ΔHm) which were opposite in sign, namely H1:1m=−0.25 eV for solid Fe-Al and ΔH1:1m=+0.075 eV for solid Mo-Cr. (ΔH1:1m applies to a 1:1 composition.) With Fe-Al a well-defined peak broadening was observed as the profiling temperature increased, while with Mo-Cr there was a slight narrowing of the peaks with increasing temperature. The results were analyzed in terms of numerical solutions of a diffusion equation which contained terms appropriate not only to ballistic motion but also to the motion of bombardment-induced residual defects. The latter were assumed to be in part "chemically guided,'' as quantified with the parameter "qp'' (qp∼∝ΔHm). A major difference between Fe-Al and Mo-Cr was found. The peak changes with Fe-Al scaled with what we have termed the effective diffusion coefficient Deff=Dt(1−qp/4). Here Dt is the total diffusion coefficient, i.e., it describes the total diffusivity for all mixing processes. With Mo-Cr, on the other hand, the peak changes scaled approximately with 1/qp. The mixing behavior of Fe-Al, with negative ΔHm, could thus be said to be mainly kinetic (with Deff playing a major role), while that of Mo-Cr, with positive ΔHm, is more nearly thermodynamic (with qp playing a major role). © 1996 American Institute of Physics.
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  • 3
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 285-294 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effects of N+ implantation into SiC films deposited on stainless steel and Cu substrates were examined in connection with the adhesion properties of the SiC films. The films were deposited at 453 K by rf magnetron sputtering and N+ implantation of 1×1016–5×1017 ions/cm2 was done at room temperature at either 30 or 160 keV ion energy. Chemical characterization of the implanted bilayers, at the interface region, and compositional depth profiles were obtained by Auger electron spectroscopy. The adhesion of the films was examined using a scratch tester and scanning electron microscopy equipped with an energy dispersive spectroscopy microanalyzer. Microhardness measurements and indentation fracture toughness analysis were made on SiC films deposited on cemented tungsten carbide. In the SiC/Cu bilayers, an adhesion enhancement was found which is thought to be due to the higher fracture toughness of the ceramic film, induced by N implantation. In the SiC/steel bilayers, the mechanism for the increase in adhesion is attributed to the improved mechanical properties of the SiC film and to the enhanced interfacial bonding due to formation of Si-(N,C)-Cr complexes.
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  • 4
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 87 (2000), S. 3177-3179 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We consider here the process of normal boiling as induced by laser-pulse or ion bombardment. Normal boiling (thenceforth "boiling") refers to the appearance of heterogeneously nucleated bubbles which diffuse towards the outer surface of a liquid and, if the surface is reached, may possibly escape. We will here present evidence that boiling, whether the distance scale is atomically small (5–15 nm, as for laser-pulse or ion impact on a metal in the absence of thermal diffusion) or much larger, has a prohibitive kinetic obstacle because it requires bubble diffusion. That is to say: boiling will never be a significant process for bombardment with laser pulses which are short (〈1 μs) or with ions in general. This leaves vaporization and phase explosion as the only possible thermal-spike processes capable of expelling material from a laser-pulse or ion bombarded surface in a significant quantity. © 2000 American Institute of Physics.
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  • 5
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 64 (1994), S. 977-979 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Amorphous a-SiC films were deposited by rf magnetron sputtering on stainless steel and N+ implantations were performed at room temperature over a fluence range of 1×1016–1×1017 ions/cm2 at 30 and 160 keV. Chemical characterization of the a-SiC/steel interface and compositional depth profiles were obtained by Auger electron spectroscopy. Adhesion properties of the films were examined using a scratch tester in conjunction with scanning electron microscopy. A strong adhesion enhancement (about a factor of eight) along with an improvement of the fracture toughness were observed in the implanted a-SiC/steel specimens. The key mechanisms envisaged to explain the enhanced adhesion is mainly related to the new chemical bondings, involving C and N in Si—(N,C)—Cr complexes formation at the a-SiC/steel interface.
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  • 6
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 61 (1992), S. 2784-2786 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: When polymers are sputtered with 248 or 308 nm laser pulses there are two generically different responses. The most straightforward is where the emitted particles expand outwards away from the target surface obeying, in so doing, the laws of one-dimensional adiabatic flow. The other is where the particles expand both outwards and sideways and, because a certain fraction recondenses on the target surface, there is a prominent deposit of debris lying around the bombarded spot. For spots with other than circular shape the debris show interesting symmetry in which there is rotation with respect to the spot. We show that this rotation occurs wholly through the laws of flow and we conclude, therefore, that the debris phenomenon is a purely gas-dynamic effect. It follows that the elimination of debris can be approached in gas-dynamic terms. We also show that the numerical extent of debris formation increases with the complexity of the particles involved, a result which suggests additional methods to control debris.
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  • 7
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 64 (1994), S. 2649-2651 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Various studies on ion-beam mixing suggest that the extent of mixing is sensitive to the sign and magnitude of the heat of mixing, ΔHm. This implies a role, not only for random motion, but also for chemical driving forces of the type where the total diffusion flux is modified by the factor [1−αi(1−αi) 2hmp/RT(1+p)]. Here α1 is the atomic fraction of component i, αi(1−αi)hm is the heat of mixing of a regular solution, and p is the ratio of the diffusivities for chemically guided defect motion to those for random motion of all types. The parameter p has never been evaluated for any system and we wish to evaluate it first by analyzing the profiling experiments of Marton, Fine, and Chambers on multilayers of Ni-Ag. We then obtain further values of p from ion-beam mixing experiments on bilayers and multilayers. It is shown that it is possible to understand a variety of experimental results relating to profiling and to ion-beam mixing in terms of chemical driving forces and, moreover, to do so without invoking thermal spikes.
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  • 8
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 3535-3537 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A critical assessment of thermal models for laser sputtering at high fluences is presented. It is argued that the model explaining such sputtering by involving a subsurface superheating effect misinterprets the meaning of "vaporization'' and "boiling''. As a result inappropriate boundary conditions are used, including those for both the surface temperature and for the surface temperature gradient. On the contrary, it is shown that explosive boiling (also termed phase explosion) in the sense pioneered by Martynyuk and by Fucke and Seydel remains the only thermal mechanism able to explain laser sputtering at high fluences. © 1995 American Institute of Physics.
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  • 9
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 60 (1992), S. 2980-2982 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The sputtering of polymer films with 248 or 308 nm laser pulses causes two groups of particles to be emitted. Light particles are emitted more rapidly and escape to form a shock wave. Heavy particles are emitted more slowly and under some conditions are impeded by the light ones, expand sideways, and leave debris on the target surface. Debris formation can be understood from ordinary gas dynamics where it is equivalent to recondensation beyond the bombarded spot. This is shown by numerical solution of the flow equations.
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  • 10
    ISSN: 1436-5073
    Keywords: ion beam assisted deposition ; transport processes ; chemical driving forces
    Source: Springer Online Journal Archives 1860-2000
    Topics: Chemistry and Pharmacology
    Notes: Abstract Titanium nitride films were produced on silicon substrate by ion beam assisted deposition in the alternate mode: first, thin titanium layers were deposited by electron beam evaporation and then titanium nitride was formed by nitrogen implantation at room temperature; this cycle was then iterated many times in order to obtain thicker titanium nitride layers. The obtained films were characterized with respect to atomic composition by Rutherford backscattering spectrometry and nuclear reaction analysis techniques, while chemical bonding was investigated by Auger line-shape analysis. We observe that nitrogen implantation, along with the production of titanium nitride, induces silicon migration into the film. Silicon transport is connected to point defects produced by ion implantation as well as by chemical driving forces associated with silicides formation.
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