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Evaluation of erbium-doped silicon for optoelectronic applications (1991)

Xie, Y. H. ; Fitzgerald, E. A. ; Mii, Y. J.

[S.l.] : American Institute of Physics (AIP)

Journal of Applied Physics 70 (1991), S. 3223-3228

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ISSN: 1089-7550

Source: AIP Digital Archive

Topics: Physics

Notes: Best-case evaluations are made for potential optoelectronic applications of erbium-doped silicon (EDS). The objective is to find the upper limit of performance when EDS is used as light-emitting diodes, amplifiers/modulators, and lasers. Every effort is made to use intrinsic parameters whose values are determined by physics rather than by factors such as material quality and processing quality. Consequently, the result is expected to be overly optimistic, and should be regarded as a feasibility study only. It is shown that Er-doped Si is not suitable for light-emitting-diode applications because of the low emitted power (microwatts). The intensity amplifiers/modulators made of Er-doped Si can only be expected to provide a very modest gain (〈6 cm−1). For laser applications, the threshold population inversion can be achieved in principle (assuming proper design and processing of the laser structure); however, a very efficient pumping mechanism is necessary for the laser to provide reasonable power output (of the order of mW/facet). Finally, a view on the direction of future research in this field is presented. Since the rare-earth ion luminescence is known to be fairly independent of the host materials, the results obtained from this study are expected to be applicable to most of the other rare-earth-doped semiconductors.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.349306

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Effect of arsenic dimer species to silicon doping of GaAs layers prepared by molecular beam epitaxy (1991)

Wu, B. J. ; Mii, Y. J. ; Chen, M. ; [et al.]

Woodbury, NY : American Institute of Physics (AIP)

Applied Physics Letters 58 (1991), S. 391-393

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ISSN: 1077-3118

Source: AIP Digital Archive

Topics: Physics

Notes: A strong dependence of Si doping on dimer arsenic (As2) flux and substrate temperature is observed for GaAs films grown by molecular beam epitaxy. Using an arsenic effusion cell with a cracker, Si doping levels are shown to depend on the cracking efficiency and substrate temperature. With the same Si cell temperature and GaAs growth conditions, the measured carrier concentration of the grown films decreases as the cracker temperature (cracker current) is increased and this dependence becomes stronger as the substrate temperature is increased. For samples grown at 660 °C, more than a factor of four decrease of the doping concentration is observed for the cracker current changing from 5 to 6.5 A. For those grown at 560 °C, there is only a weak dependence. Evidence is given to show that carbon contamination and Si self-compensation are not the causes of this effect. The formation of volatile SixAsy compound at the substrate surface is proposed to account for this phenomenon.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.104644

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3

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Hole intersubband absorption in δ-doped multiple Si layers (1991)

Park, J. S. ; Karunasiri, R. P. G. ; Mii, Y. J. ; [et al.]

Woodbury, NY : American Institute of Physics (AIP)

Applied Physics Letters 58 (1991), S. 1083-1085

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ISSN: 1077-3118

Source: AIP Digital Archive

Topics: Physics

Notes: The hole intersubband infrared absorption in δ-doped Si multiple quantum wells is observed for the first time. The structures used consist of ten periods of boron-doped Si quantum wells and undoped Si barriers. Near 100% infrared absorption is measured by a Fourier transform infrared spectrometer using waveguide structures. The observed absorption peaks ranging between 3 and 7 μm, which are mainly due to the transition between the first two heavy hole subbands. This absorption peak can be tuned by varying the doping concentration in the δ-doped layer. The polarization-dependent spectra show good agreement with the intersubband selection rule. The estimated peak energy positions using a self-consistency calculation with exchange effects as a perturbation agree reasonably well with the experimental observation. This observation suggests the use of multiple quantum well for IR detector application using Si technology

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.104378

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4

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Intersubband absorption in Si1−xGex/Si multiple quantum wells (1990)

Karunasiri, R. P. G. ; Park, J. S. ; Mii, Y. J. ; [et al.]

Woodbury, NY : American Institute of Physics (AIP)

Applied Physics Letters 57 (1990), S. 2585-2587

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ISSN: 1077-3118

Source: AIP Digital Archive

Topics: Physics

Notes: The intersubband infrared absorption of holes in Si1−xGex/Si multiple quantum wells is observed. The quantum well structure consists of 10 periods of 40−A(ring)−thick Si0.6Ge0.4 wells and 300−A(ring)−thick Si barriers. The samples are prepared using molecular beam epitaxy. In the experiment, the infrared absorption as a function of wavelength is measured using a waveguide geometry. An absorption peak near 8.1 μm has been observed, which is due to the transition between first two heavy hole bound states. The polarization dependence spectra are in good agreement with the selection rules for the intersubband transition.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.103823

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5

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Large Stark shifts of the local to global state intersubband transitions in step quantum wells (1990)

Mii, Y. J. ; Karunasiri, R. P. G. ; Wang, K. L. ; [et al.]

Woodbury, NY : American Institute of Physics (AIP)

Applied Physics Letters 56 (1990), S. 1986-1988

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ISSN: 1077-3118

Source: AIP Digital Archive

Topics: Physics

Notes: Large Stark shifts of intersubband transitions in a step quantum well are observed for the first time. The Stark shifts are ∼8 and 7 meV at ∼18 kV/cm for the 1→2 and 1→3 intersubband transitions, respectively, while the Stark shift of a similar transition in a square quantum well is only about 0.5 meV under the same bias condition. The intersubband transitions in step quantum wells can be either red or blue Stark shifted depending on the direction of the applied electric field. The large Stark shifts of intersubband transitions in the step quantum wells can be exploited for the fabrication of optical modulators operating in the range from mid to far infrared.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.103193

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6

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Observation of large oscillator strengths for both 1→2 and 1→3 intersubband transitions of step quantum wells (1990)

Mii, Y. J. ; Wang, K. L. ; Karunasiri, R. P. G. ; [et al.]

Woodbury, NY : American Institute of Physics (AIP)

Applied Physics Letters 56 (1990), S. 1046-1048

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ISSN: 1077-3118

Source: AIP Digital Archive

Topics: Physics

Notes: Both 1→2 and 1→3 intersubband transitions have been observed in a step quantum well structure consisting of 60 A(ring) GaAs wells, 90 A(ring) Al0.18Ga0.82As steps, and 280 A(ring) Al0.44 Ga0.56As barriers. The transition energy and oscillator strength are 112 meV and 0.23 for the 1→2 transition and 150 meV and 0.15 for the 1→3 transition, respectively. The asymmetric property of a step quantum well allows the normally forbidden 1→3 transition to occur. The relaxation of the selection rule suggests a possibility of using optical pumping for infrared laser applications.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.102610

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7

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Electrical and optical properties of GaAs/AlGaAs multiple quantum wells grown on Si substrates (1988)

Mii, Y. J. ; Karunasiri, R. P. G. ; Wang, K. L.

Woodbury, NY : American Institute of Physics (AIP)

Applied Physics Letters 53 (1988), S. 2050-2052

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ISSN: 1077-3118

Source: AIP Digital Archive

Topics: Physics

Notes: Intersubband infrared absorption and sequential resonant tunneling in GaAs/AlGaAs multiple quantum wells grown on Si substrates are reported for the first time. The observed electrical and optical properties of the multiple quantum wells on Si are comparable to similar structures grown directly on GaAs substrates. This suggests the potential application of integrating the GaAs/AlGaAs multiple quantum well devices with Si very large scale integrated circuits for long-wavelength (near 10 μm) infrared detection.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.100316

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8

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Extremely high electron mobility in Si/GexSi1−x structures grown by molecular beam epitaxy (1991)

Mii, Y. J. ; Xie, Y. H. ; Fitzgerald, E. A. ; [et al.]

Woodbury, NY : American Institute of Physics (AIP)

Applied Physics Letters 59 (1991), S. 1611-1613

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ISSN: 1077-3118

Source: AIP Digital Archive

Topics: Physics

Notes: A modulation-doped Si/GexSi1−x structure was fabricated in which a thin Si layer is employed as the conduction channel for the two-dimensional electron gas. The strained heterostructure is fabricated on top of a low threading dislocation density, totally relaxed, GexSi1−x buffer layer with a linearly graded Ge concentration profile. The mobility of the two-dimensional electron gas as determined from Hall measurements was 1600 cm2/V s at 300 K and 96 000 cm2/V s at 4.2 K. Recently, a 4.2 K mobility of 125 000 cm2/V s was observed from a similar sample.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.106246

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9

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Totally relaxed GexSi1−x layers with low threading dislocation densities grown on Si substrates (1991)

Fitzgerald, E. A. ; Xie, Y.-H. ; Green, M. L. ; [et al.]

Woodbury, NY : American Institute of Physics (AIP)

Applied Physics Letters 59 (1991), S. 811-813

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ISSN: 1077-3118

Source: AIP Digital Archive

Topics: Physics

Notes: We have grown compositionally graded GexSi1−x layers on Si at 900 °C with both molecular beam epitaxy and rapid thermal chemical vapor deposition techniques. Triple-crystal x-ray diffraction reveals that for 0.10〈x〈0.53, the layers are totally relaxed. GexSi1−x cap layers grown on these graded layers are threading-dislocation-free when examined with conventional plan-view and cross-sectional transmission electron microscopy. Electron beam induced current images were used to count the low threading dislocation densities, which were 4×105±5×104 cm−2 and 3×106±2×106 cm−2 Eq. 2×106 cm−2 for x=0.23 and x=0.50, respectively. Photoluminescence spectra from the cap layers are identical to photoluminescence from bulk GexSi1−x.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.105351

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