Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
61 (1992), S. 2196-2198
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
AlInAs lattice matched to InP was grown by molecular beam epitaxy over a temperature range of 150–400 °C and characterized by x-ray diffraction and photoluminescence. As-grown samples compared to those annealed at 500 °C showed no shift in the AlInAs x-ray diffraction peak for growth above 285 °C, indicating no detectable incorporation of excess As in this temperature range. Growth below this temperature saw a linear increase in the shift of the AlInAs diffraction peak due to incorporation of excess As, with samples grown at 150 °C showing a shift of 130 arcsec. Photoluminescence measurements of annealed AlInAs grown above 275 °C exhibited slight increase in PL intensity, while annealed samples grown below 260 °C exhibited large intensity degradation.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.108293
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