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  • 1
    Electronic Resource
    Electronic Resource
    2,6-Dihydroxybenzoic acid anilides as fasciolicides (1973)
    s.l. : American Chemical Society
    Journal of medicinal chemistry 16 (1973), S. 433-436 
    Details
    ISSN: 1520-4804
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/jm00263a001
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  • 2
    Electronic Resource
    Electronic Resource
    Structure-activity relationships for activation of adenylate cyclase by the diterpene forskolin and its derivatives (1983)
    s.l. : American Chemical Society
    Journal of medicinal chemistry 26 (1983), S. 436-439 
    Details
    ISSN: 1520-4804
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/jm00357a021
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  • 3
    Electronic Resource
    Electronic Resource
    Optical constants and film density of TiNxOy solar selective absorbers (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 2133-2137 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Thin TiNxOy films were deposited on glass substrates in an activated reactive evaporation process. The influence of the reactive gas composition and pressure during deposition on the film density ρMass was investigated by grazing incidence x-ray-diffraction measurements. The density increases from 3.8 to 4.8 g/cm3 when lowering the total gas pressure ptotal from 10−3 h Pa down to 2.5×10−4 h Pa, whereas the ratio of the partial gas pressures of nitrogen and oxygen has no measurable effect on the film density. Data on the refractive index are presented, obtained from reflectance and transmittance measurements in the optical wavelength range (λ=0.3–2.5 μm). Bruggeman effective medium theory was applied to explain the optical behavior ñ(λ) as a result of the low density of the coatings. The high porosity of the films suppresses the metallic character of the phases TiN and TiO contained in the TiNxOy film. Its dielectriclike behavior in the infrared region is essential for low thermal emittances when deposited on copper to form a solar selective absorber. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.358790
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  • 4
    Electronic Resource
    Electronic Resource
    EUREKA! AND OTHER PLEASURES* (1998)
    Palo Alto, Calif. : Annual Reviews
    Annual Review of Immunology 16 (1998), S. 1-25 
    Details
    ISSN: 0732-0582
    Source: Annual Reviews Electronic Back Volume Collection 1932-2001ff
    Topics: Biology , Medicine
    Notes: At first one is very pleased at being invited to write a Prefatory Chapter, but as the delivery deadline draws closer one begins to think, "Oh my God! What on earth can I say that all but family members and few close friends will not find a great bore?" One solution is to write a scientific essay, but I concluded that that was a cop-out. I decided that perhaps the best tack to follow was to try to convey to the reader the personal characteristics I bring to my science and to other aspects of my professional career. The writing of this chapter has certainly convinced me that my particular background influenced what problems I chose to work on and how I approached their solution, but I hope that my results have a more ecumenical significance. There's been much written recently about how one's cultural background affects one's science, but I think that thesis can also be exaggerated. Science is a method of inquiry that by using certain guidelines permits rational individuals to observe Nature in a way that their findings will agree and have permanence. We shouldn't be diffident about defending that claim of objectivity.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1146/annurev.immunol.16.1.1
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  • 5
    Electronic Resource
    Electronic Resource
    Structural Basis of Antibody Function (1983)
    Palo Alto, Calif. : Annual Reviews
    Annual Review of Immunology 1 (1983), S. 87-115 
    Details
    ISSN: 0732-0582
    Source: Annual Reviews Electronic Back Volume Collection 1932-2001ff
    Topics: Biology , Medicine
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1146/annurev.iy.01.040183.000511
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  • 6
    Electronic Resource
    Electronic Resource
    The Receptor with High Affinity for Immunoglobulin E (1986)
    Palo Alto, Calif. : Annual Reviews
    Annual Review of Immunology 4 (1986), S. 419-470 
    Details
    ISSN: 0732-0582
    Source: Annual Reviews Electronic Back Volume Collection 1932-2001ff
    Topics: Biology , Medicine
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1146/annurev.iy.04.040186.002223
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  • 7
    Electronic Resource
    Electronic Resource
    A cDNA presumptively coding for the .alpha. subunit of the receptor with high affinity for immunoglobulin E (1987)
    s.l. : American Chemical Society
    Biochemistry 26 (1987), S. 4605-4610 
    Details
    ISSN: 1520-4995
    Source: ACS Legacy Archives
    Topics: Biology , Chemistry and Pharmacology
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/bi00389a002
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  • 8
    Electronic Resource
    Electronic Resource
    Depth-resolved measurement of lattice relaxation in Ga1−xInxAs/GaAs strained layer superlattices by means of grazing-incidence x-ray diffraction (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 2381-2387 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The state of relaxation in two different superlattices (SLs) of a system with large lattice mismatch, Ga0.8In0.2As/GaAs grown on GaAs [001] by molecular beam epitaxy, has been investigated by surface-sensitive grazing-incidence diffraction (GID). The SL is squeezed between the substrate and a thick GaAs top layer. The thickness of individual GaInAs layers ta (active layer) is the same in both samples, while the GaAs barrier thickness tb is different. We have studied the influence of the thickness ratio tb/ta on the state of relaxation for different distances from the sample surface. We find that for thick barriers the whole SL remains coherently strained and for the thinner barrier thickness the SL is partially relaxed against the the GaAs top layer. The GID technique was applied for the first time to obtain depth resolution of the lateral lattice parameter in a SL. It is demonstrated to be especially well suited for SL systems with a small difference of the average electron density between the sublayers. The scattering contrast is improved by measuring the intensity as a function of the exit angle ("rod scans'') from the "weak'' (200) Bragg reflection. Comparing computer simulations with the measured variation of the scattering contrast between GaAs and GaInAs layers obtained from different "information depths'' and at different angular positions of the in-plane rocking curves, the state of relaxation can quantitatively be evaluated. On the basis of these results we propose two models for the partial relaxation of the SL into the state of strain-reduced domains. We believe that the partial relaxation is due to the elastic field interaction between the GaInAs layers accross the GaAs barriers, if tb is small.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.354724
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  • 9
    Electronic Resource
    Electronic Resource
    Investigations of semiconductor superlattices by depth-sensitive x-ray methods (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 146-152 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Focusing on the structure determination of a GaInAs/InP superlattice (SL), the potential of grazing incidence diffraction (GID) to resolve structure parameters on a microscopic scale is compared to x-ray reflectivity and conventional x-ray diffraction (XRD) measurements. Usually, information on the density profile perpendicular to the surface is obtained by x-ray reflectivity and on lattice mismatch by XRD. Since the penetration depth of x rays is much larger than the total thickness of the SL these methods measure parameters averaged over the whole structure. Furthermore, the depth sensitivity of both methods is small in the case of extremly high thickness ratios of the sublayers within the SL period. These disadvantages can be overcome using GID geometry for which the information depth can be reduced by keeping the angle of incidence αi and exit αf of the x-ray beam with respect to the surface in the range close to the critical angle of total external reflection αC. This enables a depth-selective structure determination. As an example measurements and computer simulations corresponding to the three different methods of a lattice-matched (GaIn)As/InP SL are presented. The periodic length of the present SL and the thickness of the top layer was determined by all three methods to monolayer accuracy.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.354130
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  • 10
    Electronic Resource
    Electronic Resource
    Complexes of cis-1,2-bis(dimethylarsino)ethylene. I. Iron and cobalt (1968)
    s.l. : American Chemical Society
    Inorganic chemistry 7 (1968), S. 2003-2006 
    Details
    ISSN: 1520-510X
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/ic50068a008
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