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  • 1
    Electronic Resource
    Electronic Resource
    Phase control of cubic boron nitride thin films (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 72 (1992), S. 504-513 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Ion beam assisted evaporation was used to deposit cubic and hexagonal boron nitride thin films. Boron was evaporated and bombardment was by argon and nitrogen ions. The effect of preparation conditions on the resulting phase was studied, and the relationship between the phase and the energy and momentum transferred into the film through ion bombardment was examined. It is shown that for a given temperature, the controlling factor in the resulting thin film phase is the momentum transferred into the film per depositing boron atom. At 300–400 °C a sharp threshold value of momentum-per-atom exists below which films are hexagonal and above which they are cubic. For 400 °C this threshold occurred at 200 (eV×amu)1/2 which is equal to 3.3×10−21 m kg s−1. Depositions performed using krypton and xenon instead of argon as the second bombarding gas confirmed this momentum-per-atom value. A second threshold was also observed, which was bombarding species dependent, above which either complete resputtering of the deposited material or reversion to the hexagonal phase occurred. Cubic boron nitride deposition was seen to occur in a window of momentum-per-atom values between these two thresholds. Using this information it was possible to grow cubic boron nitride using only nitrogen bombardment, although the window of momentum-per-atom values for nitrogen is very narrow. The effect of substrate temperature was studied, and it was found to be difficult to grow predominantly cubic phase films below 300–400 °C. The relationship between intrinsic stress and phase of the films is also discussed. A diagram is presented showing film phase as a function of bombardment, substrate temperature, and system chemistry. The parameter of momentum-per-atom is shown to combine into a single value the variables of ion beam assisted deposition: deposition rate, ion energy, ion flux, and ion species. It is suggested that, in general, for properties affected by ion bombardment the momentum-per-atom transferred into the film is the controlling factor. The results are shown to support momentum transfer as the dominant process in cubic boron nitride thin film formation.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.351881
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  • 2
    Electronic Resource
    Electronic Resource
    Pressure dependence of the negative bias voltage for stabilization of cubic boron nitride thin films deposited by sputtering (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 72 (1998), S. 2523-2525 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Thin films of boron nitride were deposited by unbalanced magnetron sputtering at pressures between 0.065 and 1.32 Pa in order to study the effects of pressure and negative substrate bias on the energy of the bombarding plasma ions and subsequent stabilization of the cubic phase. It was found that the threshold bias voltage for nucleation of films with a high percentage of the cubic phase increases with the product of the pressure and sheath thickness. This trend is explained in terms of the changes in the average energy of the particles bombarding the growing film produced by pressure-dependent charge-exchange collisions in the plasma/substrate sheath. This energy modification process has predictable consequences in complex deposition processes. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.121407
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  • 3
    Electronic Resource
    Electronic Resource
    Downstream plasma-enhanced diamond film deposition (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 56 (1990), S. 2010-2012 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Diamond films have been deposited on a variety of substrates up to 2 cm below the luminous plasma in a tubular microwave plasma-enhanced chemical vapor deposition system. Depositing downstream of the plasma appears to offer several advantages over immersion of substrates in the plasma, for coating certain oxide substrates, including a reduction in substrate etching and an improvement in film uniformity, adhesion, and transparency. Furthermore, positioning substrates downstream of the plasma and adjusting their temperature with an external heater decouples the plasma and substrate parameters, facilitating studies to determine the effect of various parameters on the chemical vapor deposition diamond process. A disadvantage of downstream deposition is the decrease in the growth rate of diamond films.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.103001
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  • 4
    Electronic Resource
    Electronic Resource
    In-process ellipsometric monitoring of diamond film growth by microwave plasma enhanced chemical vapor deposition (1992)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 60 (1992), S. 2868-2870 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In-process monitoring of diamond film growth was performed with near-infrared ellipsometry (1550 nm). The trajectories in the ellipsometric parameters (ψ,Δ) differ according to the method of substrate pretreatment and the CO/H2 gas ratio used in the microwave plasma-enhanced chemical vapor deposition process. The nucleation density determined from ellipsometry shows qualitative agreement with that from scanning electron microscopy performed after deposition. The rate at which nuclei develop is also monitored, and the observed induction time is shorter for conditions leading to a higher nucleation density.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.106827
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  • 5
    Electronic Resource
    Electronic Resource
    Geometry of thin-film morphology (1985)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 58 (1985), S. 3739-3746 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The columnar morphologies commonly found in all vapor-deposited thin films prepared under low mobility conditions have been classified by several variations of what have been termed structure zone models. Such morphological structures are found to have a strong similarity in shape and form over six orders of magnitude in film thickness and three orders of magnitude in magnification for films of a given thickness. Thick (45-mm) pyrolytic graphite films are shown to be a good demonstration of the continuous growth evolution of conical-shaped units. Due to competition for growth each cone eventually goes through a death stage. A model based upon these general structural observations is presented and is shown to be a geometric construction similar to a Sierpinski gasket. The origin of this morphology seems to be the natural clustering which occurs due to the random process of ballistic aggregation.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.335639
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  • 6
    Electronic Resource
    Electronic Resource
    Improvement of Adhesion of Cubic Boron Nitride Films: Effect of Interlayer and Deposition Parameters (2005)
    s.l. ; Stafa-Zurich, Switzerland
    Materials science forum Vol. 475-479 (Jan. 2005), p. 3635-3640 
    Details
    ISSN: 1662-9752
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Diamond and B4C coatings were used as an interlayer for the growth of cubic boronnitride thin films on c-silicon. By employing a B-C-N gradient layer on top of the B4C interlayer, improved adhesion occured between BN and B4C. A multi-step process after the nucleation of c-BN was found very helpful for improving the adhesion of c-BN on silicon with interlayers. Residual stress of c-BN thin film was significantly decreased by using a new post-deposition annealing treatment
    Type of Medium: Electronic Resource
    URL: http://www.tib-hannover.de/fulltexts/2011/0528/02/10/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.475-479.3635.pdf
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  • 7
    Electronic Resource
    Electronic Resource
    Sculptured thin films – I. Concepts (1997)
    Springer
    Materials research innovations 1 (1997), S. 145-148 
    Details
    ISSN: 1433-075X
    Keywords: Key words Sculptured thin films ; Helicoidal mediums ; Nematic mediums ; Optical elements
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Abstract  A report on the conceptualization of sculptured thin films (STFs), as well as on recent theoretical advances thereon, is presented. The morphology of a STF is described in terms of a spatially varying unit vector called the director, whose piecewise specification assists in setting up frequency-dependent constitutive relations of the STF. These relations lead in turn to a 4×4 matrix differential equation for the propagation of electromagnetic waves in the STF. Optical, suboptical, infrared and even millimeter-wave applications are possible, as well as acoustic and piezoelectric ones.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/s100190050032
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  • 8
    Electronic Resource
    Electronic Resource
    The Chemical Vapor Deposition of Diamond (1991)
    s.l. ; Stafa-Zurich, Switzerland
    Materials science forum Vol. 52-53 (Jan. 1991), p. 151-174 
    Details
    ISSN: 1662-9752
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Type of Medium: Electronic Resource
    URL: http://www.tib-hannover.de/fulltexts/2011/0528/02/13/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.52-53.151.pdf
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  • 9
    Electronic Resource
    Electronic Resource
    Phenomenology of the “explosive” crystallization of sputtered non-crystalline germanium films (1973)
    Springer
    Journal of materials science 8 (1973), S. 1809-1816 
    Details
    ISSN: 1573-4803
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Abstract Certain non-crystalline germanium films (〉 10 μm in thickness) prepared by rf-sputtering crystallize “explosively” at room temperature when initiated by pricking the surface with a sharp point (or certain other methods). The propagation velocity of the crystallization at room temperature was found to be as fast a 1200 mm sec−1 depending somewhat on the conditions of film preparation, thickness, etc. The density of several such crystallizable films was determined as 5.05 g cm−3±1%. The crystallite size in the crystallized films, measured by X-ray broadening, was typically larger than 500 Å. A model for the crystallization process invokes a cascade energy transfer process, basically thermal in nature.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF02403534
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  • 10
    Electronic Resource
    Electronic Resource
    Phenomenology of the “explosive” crystallization of sputtered non-crystalline germanium films (1973)
    Springer
    Journal of materials science 8 (1973), S. 1809-1816 
    Details
    ISSN: 1573-4803
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Abstract Certain non-crystalline germanium films (〉 10 μm in thickness) prepared by rf-sputtering crystallize “explosively” at room temperature when initiated by pricking the surface with a sharp point (or certain other methods). The propagation velocity of the crystallization at room temperature was found to be as fast a 1200 mm sec−1 depending somewhat on the conditions of film preparation, thickness, etc. The density of several such crystallizable films was determined as 5.05 g cm−3±1%. The crystallite size in the crystallized films, measured by X-ray broadening, was typically larger than 500 Å. A model for the crystallization process invokes a cascade energy transfer process, basically thermal in nature.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00552194
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