Electronic Resource
[S.l.]
:
American Institute of Physics (AIP)
Journal of Applied Physics
58 (1985), S. 1058-1060
ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
The influence of UV irradiation (λ=248 nm) on fixed oxide charges in wet and dry SiO2, with and without postgrowth anneal, is reported. In annealed samples, the density of positive fixed oxide charge increases with accumulated UV dose, more rapidly in dry SiO2 than in wet. In unannealed oxides, the positive fixed oxide charge decreases and becomes negative in wet oxide. Tentative explanations are presented.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.336216
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