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  • 1
    Publication Date: 2023-07-27
    Description: 〈title xmlns:mml="http://www.w3.org/1998/Math/MathML"〉Abstract〈/title〉〈p xmlns:mml="http://www.w3.org/1998/Math/MathML" xml:lang="en"〉Rockwall erosion by rockfall is largely controlled by frost weathering in high alpine environments. As alpine rock types are characterized by crack‐dominated porosity and high rock strength, frost cracking observations from low strength and grain supported pore‐space rocks cannot be transferred. Here, we conducted laboratory experiments on Wetterstein limestone samples with different initial crack density and saturation to test their influence on frost cracking efficacy. We exposed rocks to real‐rockwall freezing conditions and monitored acoustic emissions as a proxy for cracking. To differentiate triggers of observed cracking, we modeled ice pressure and thermal stresses. Our results show initial full saturation is not a singular prerequisite for frost cracking. We also observe higher cracking rates in less‐fractured rock. Finally, we find that the temperature threshold for frost cracking in alpine rocks falls below −7°C. Thus, colder, north‐exposed rock faces in the Alps likely experience more frost cracking than southern‐facing counterparts.〈/p〉
    Description: Plain Language Summary: Freezing results in the formation of ice that exerts stresses on fracture walls and draws in additional moisture to supply further growth and break down rocks, a process termed frost cracking. Frost cracking drives much erosion and rockfall in alpine environments. Here we test hypotheses from prior work about how frost cracking is impacted by saturation and rock properties. We exposed rock samples of different strength and saturation to identical freezing conditions in laboratory experiments. We monitored rock temperature and acoustic emissions (AE), assuming frost cracking produces the recorded AE hits. We find that initial full saturation is not required for frost cracking, as water transport is enhanced by fractures in alpine rocks. Furthermore, rock with initial higher short‐term strength showed more frost cracking because, we infer, of stiffness properties that make these rocks more brittle compared to lower strength rocks. Frost cracking occurred at a wide range of temperatures below freezing and was highest between −9 and −7°C. We thus conclude that frost cracking is most impacted by temperature and rock short‐term strength. In Alpine environments, this may result in more frost cracking and rockfall on colder north‐facing rockwalls than warmer southern exposures.〈/p〉
    Description: Key Points: Initial saturation levels do not limit the efficacy of ice segregation in fractured alpine rocks. Rock initial crack density impacts rock stiffness and thermal properties and thus frost cracking efficacy. The “frost cracking window” temperature range is dependent on rock strength and crack‐controlled porosity in alpine rocks.
    Description: German Reserach Foundation
    Description: https://doi.org/10.6084/m9.figshare.23584686
    Keywords: ddc:551.3 ; frost weathering ; frost cracking ; periglacial processes ; rock weathering ; thermal stress ; acoustic emission
    Language: English
    Type: doc-type:article
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  • 2
    Electronic Resource
    Electronic Resource
    s.l. : American Chemical Society
    The @journal of physical chemistry 〈Washington, DC〉 78 (1974), S. 2645-2649 
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology , Physics
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    s.l. : American Chemical Society
    The @journal of physical chemistry 〈Washington, DC〉 78 (1974), S. 2195-2200 
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology , Physics
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    s.l. : American Chemical Society
    The @journal of physical chemistry 〈Washington, DC〉 78 (1974), S. 2429-2433 
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology , Physics
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    s.l. : American Chemical Society
    The @journal of physical chemistry 〈Washington, DC〉 78 (1974), S. 2422-2429 
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology , Physics
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    s.l. : American Chemical Society
    The @journal of physical chemistry 〈Washington, DC〉 78 (1974), S. 2433-2437 
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology , Physics
    Type of Medium: Electronic Resource
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  • 7
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 1633-1643 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We characterize the development of nanometer scale topography (roughness) on SiO2 surfaces as a result of low energy, off-normal ion bombardment, using in situ energy dispersive x-ray reflectivity and atomic force microscopy. Surfaces roughen during sputtering by heavy ions (Xe), with roughness increasing approximately linearly with ion fluence up to 1017 cm−2. A highly coherent ripple structure with wavelength of 30 nm and oriented with the wave vector parallel to the direction of incidence is observed after Xe sputtering at 1 keV. Lower frequency, random texture is also observed. Subsequent light ion (H, He) bombardment smoothens preroughened surfaces. The smoothing kinetics are first order with ion fluence and strongly dependent on ion energy in the range 0.2–1 eV. We present a linear model to account for the experimental observations which includes roughening both by random stochastic processes and by development of a periodic surface instability due to sputter yield variations with surface curvature which leads to ripple development. Smoothing occurs via ion bombardment induced viscous flow and surface diffusion. From the smoothing kinetics with H and He irradiation we measure the radiation enhanced viscosity of SiO2 and find values on the order of 1–20×1012 N s m−2. The viscous relaxation per ion scales as the square root of the ion induced displacements in the film over the range of the ion penetration, suggesting short-lived defects with a bimolecular annihilation mechanism. The surface instability mechanism accounts for the ripple formation, while inclusion of stochastic roughening produces the random texture and reproduces the observed linear roughening kinetics and the magnitude of the overall roughness.
    Type of Medium: Electronic Resource
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  • 8
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 2098-2104 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We describe electrical measurement on exposed surfaces of n- and p-type GaAs. The n-type surface exhibits substantial electron-hole pair generation and the subsequent escape of generated holes by leakage along the surface. In contrast, the surface of p-type GaAs does not exhibit measurable leakage of minority electrons. These results are significant for all GaAs devices and circuits which are sensitive to small leakage currents, and may provide important clues to the physical and electrical nature of exposed GaAs surfaces.
    Type of Medium: Electronic Resource
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  • 9
    Electronic Resource
    Electronic Resource
    s.l. : American Chemical Society
    Analytical chemistry 43 (1971), S. 174-185 
    ISSN: 1520-6882
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
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  • 10
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 83 (1998), S. 4690-4694 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We use scanning tunneling microscopy to study the coverage-dependent effects of hydrogen on Al thin film nucleation on Si(100). Using a quench-and-look procedure we find that small amounts of H affect Al island structure. Specifically, Al films deposited onto Si having 0.15 monolayer of adsorbed monohydride show an increased island density and a preponderance of small (≤4 atom) clusters, compared with growth on clean Si. We interpret this to be a result of reduced Al adatom diffusion lengths due to site blocking or trapping. Also, the effects of a full monolayer of hydrogen on Al thin film morphology are studied. Al deposited onto Si(100) terminated with a layer of monohydride forms three-dimensional islands, unlike growth on clean Si. Although a change in growth morphology is observed in thin Al films, the out-of-plane crystal texture of thick Al films (300–1000 Å) is unaffected by a monolayer of interfacial hydrogen. Hydrogen is not present at a Si–Al interface after thick film growth at 100 °C on fully passivated substrates.
    Type of Medium: Electronic Resource
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