ISSN:
1089-7623
Source:
AIP Digital Archive
Topics:
Physics
,
Electrical Engineering, Measurement and Control Technology
Notes:
A novel, entirely solid-state, instrument has been developed for the study of time-resolved photoluminescence in a wide variety of bulk semiconductors, low-dimensional structures, and other materials. This system uses a frequency-doubled GaAlAs diode laser (pulse width 30 ps) as the 415-nm pump source and a silicon single-photon avalanche diode for detection of photoluminescence. The time-correlated single photon counting technique allows measurement of photoluminescence decays in the temporal region of 10 ps to (approximately-greater-than)500 ns with high statistical accuracy. In addition, the combination of a microscope with a small-area detector provides a spatial resolution of 〈5 μm. This system is currently being used for the measurement of picosecond time-resolved photoluminescence from II-VI semiconductors.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.1142598
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