ISSN:
1063-7826
Source:
Springer Online Journal Archives 1860-2000
Topics:
Electrical Engineering, Measurement and Control Technology
,
Physics
Notes:
Abstract The short-range-order structure and electron paramagnetic resonance of amorphous silicon prepared by vacuum sublimation and by ion implantation are investigated. It is found that amorphous silicon with atoms in the sp 2 hybrid state is formed in the annealing of evaporated silicon at 500 °C or in the irradiation of a silicon single crystal with neon at a dose greater than or of the order of 1017 cm−2. In the latter case the amorphous material is depthwise inhomogeneous and contains a layered structure consisting of silicon atoms with a period of 5.16 Å. In each case an ESR signal with a g factor g⋍2.0048, which corresponds to a dangling bond of a silicon atom in the sp 2 state, is observed.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1134/1.1187628
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